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Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology Journal article
Fan, Yutong, Zhang, Weihang, Liu, Zhihong, Zhao, Shenglei, Jiang, Yang, Mak, Pui In, Hao, Yue, Zhang, Jincheng. Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology[J]. IEEE Transactions on Electron Devices, 2024.
Authors:  Fan, Yutong;  Zhang, Weihang;  Liu, Zhihong;  Zhao, Shenglei;  Jiang, Yang; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.9/2.9 | Submit date：2024/05/16
Cmos  Gallium Nitride (Gan)  Inverter  Monolithic Heterogeneous Integration  Si  Wafer-scale  
Wafer-Scale 2H-MoS2 Monolayer for High Surface-enhanced Raman Scattering Performance: Charge-Transfer Coupled with Molecule Resonance Journal article
An, Keyu, Chen, Mingpeng, He, Bingchen, Ai, Haoqiang, Wang, Wei, Zhang, Zhihong, Pan, Zhongbin, Chen, Shi, Ip, Weng Fai, Lo, Kin Ho, Chai, Jianwei, Wang, Shijie, Yang, Ming, Wang, Shuangpeng, Pan, Hui. Wafer-Scale 2H-MoS2 Monolayer for High Surface-enhanced Raman Scattering Performance: Charge-Transfer Coupled with Molecule Resonance[J]. Advanced Materials Technologies, 2022, 7(8), 2200217.
Authors:  An, Keyu;  Chen, Mingpeng;  He, Bingchen;  Ai, Haoqiang;  Wang, Wei; et al.
Favorite | TC[WOS]:17 TC[Scopus]:18  IF:6.4/8.0 | Submit date：2022/05/17
Charge Transfer  Molecule Resonance  Mos2 Monolayer  Sers  Wafer Scale