×
验证码:
换一张
Forgotten Password?
Stay signed in
Login With UMPASS
English
|
繁體
Login With UMPASS
Log In
ALL
ORCID
TI
AU
PY
SU
KW
TY
JN
DA
IN
PB
FP
ST
SM
Study Hall
Home
Faculties & Institutes
Scholars
Publications
Subjects
Statistics
News
Search in the results
Faculties & Institutes
INSTITUTE OF APP... [1]
THE STATE KEY LA... [1]
INSTITUTE OF MIC... [1]
Faculty of Scien... [1]
Authors
RUI PAULO DA SIL... [1]
LAM CHI SENG [1]
NG KAR WEI [1]
Document Type
Journal article [2]
Date Issued
2024 [1]
2020 [1]
Language
英語English [2]
Source Publication
IEEE Electron De... [1]
IEEE Transaction... [1]
Indexed By
SCIE [2]
Funding Organization
Funding Project
×
Knowledge Map
UM
Start a Submission
Submissions
Unclaimed
Claimed
Attach Fulltext
Bookmarks
Browse/Search Results:
1-2 of 2
Help
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
Journal Impact Factor Ascending
Journal Impact Factor Descending
Issue Date Ascending
Issue Date Descending
Submit date Ascending
Submit date Descending
WOS Cited Times Ascending
WOS Cited Times Descending
Title Ascending
Title Descending
Author Ascending
Author Descending
0.4-V Supply, 12-nW Reverse Bandgap Voltage Reference With Single BJT and Indirect Curvature Compensation
Journal article
Lee, Chon Fai, Chi-Wa, U., Martins, Rui P., Lam, Chi Seng. 0.4-V Supply, 12-nW Reverse Bandgap Voltage Reference With Single BJT and Indirect Curvature Compensation[J]. IEEE Transactions on Circuits and Systems I-Regular Papers, 2024, 71(11), 5040-5053.
Authors:
Lee, Chon Fai
;
Chi-Wa, U.
;
Martins, Rui P.
;
Lam, Chi Seng
Favorite
|
TC[WOS]:
0
TC[Scopus]:
0
IF:
5.2
/
4.5
|
Submit date:2024/12/05
Bandgap Voltage Reference
Reverse Bandgap
Nonlinear Current
Leakage Current
Temperature Coefficient
Internet Of Things
Energy Harvesting
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2
Journal article
Lu, Xing, Zhou, Xianda, Jiang, Huaxing, Ng, Kar Wei, Chen, Zimin, Pei, Yanli, Lau, Kei May, Wang, Gang. 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2[J]. IEEE Electron Device Letters, 2020, 41(3), 449-452.
Authors:
Lu, Xing
;
Zhou, Xianda
;
Jiang, Huaxing
;
Ng, Kar Wei
;
Chen, Zimin
; et al.
Favorite
|
TC[WOS]:
170
TC[Scopus]:
176
IF:
4.1
/
4.2
|
Submit date:2021/09/17
Breakdown Voltage
Heterojunction
Nio
P-n Diode
Reverse Leakage Current
Β-=ga2o3