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Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes Journal article
Lin, Jianrong, Fang, Wenhui, Tan, Haixing, Zhang, Haojun, Dai, Jingfei, Liu, Ziqing, Liu, Si, Chen, Jianwen, Wu, Runfeng, Xu, Hua, Ng, Kar Wei, Xiao, Peng, Liu, Baiquan. Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes[J]. Laser and Photonics Reviews, 2024, 18(11), 2400276.
Authors:  Lin, Jianrong;  Fang, Wenhui;  Tan, Haixing;  Zhang, Haojun;  Dai, Jingfei; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:9.8/11.1 | Submit date：2024/07/04
Amqled  Broad Spectral Responsivity  High Mobility  Innbo  Phototransistor  
Enhanced responsivity of photodetectors realized via impact ionization Journal article
Yu J., Shan C.-X., Qiao Q., Xie X.-H., Wang S.-P., Zhang Z.-Z., Shen D.-Z.. Enhanced responsivity of photodetectors realized via impact ionization[J]. SENSORS, 2012, 12(2), 1280-1287.
Authors:  Yu J.;  Shan C.-X.;  Qiao Q.;  Xie X.-H.;  Wang S.-P.; et al.
Favorite | TC[WOS]:25 TC[Scopus]:28  IF:3.4/3.7 | Submit date：2019/04/08
Impact Ionization  Photodetector  Responsivity