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A 23-pW NMOS-Only Voltage Reference with Optimum Body Selection for Process Compensation Journal article
Kai Yu, Yangrun Zhou, Sizhen Li, Mo Huang. A 23-pW NMOS-Only Voltage Reference with Optimum Body Selection for Process Compensation[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, 69(11), 4213-4217.
Authors:  Kai Yu;  Yangrun Zhou;  Sizhen Li;  Mo Huang
Favorite | TC[WOS]:9 TC[Scopus]:15  IF:4.0/3.7 | Submit date：2022/08/05
Fitting  Logic Gates  Mosfet  Nmos-only Voltage Reference  Optimum Body Selection  Power Demand  Process Compensation  Threshold Voltage  Transistors  Ultra-low-power  Voltage Measurement  
Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy Journal article
Sun, Dapeng, Zhang, Tan-Tan, Law, Man-Kay, Mak, Pui-In, Martins, Rui Paulo. Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy[J]. ELECTRONICS LETTERS, 2018, 54(22), 1270-1271.
Authors:  Sun, Dapeng;  Zhang, Tan-Tan;  Law, Man-Kay;  Mak, Pui-In;  Martins, Rui Paulo
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:0.7/0.9 | Submit date：2019/01/17
Resistors  Calibration  Cmos Integrated Circuits  Bipolar Transistors  Temperature Sensors  First-batch-only Calibration Parameters  Batch-to-batch Inaccuracy  Piecewise Bjt Process  Compensation Property  Base Recombination Current  Base-emitter Voltage  Cmos Temperature Sensor  Process Compensated Bjt  Intra-die Variation  Spread Compensation Property  On-chip Resistors  Inter-die Variation  Current 3  0 Mua  Voltage 1  2 v  Temperature-40 Degc To 125 Degc  Size 0  036 Mm  
A Dynamic Leakage and Slew Rate Compensation Circuit for 40-nm CMOS Mixed-Voltage Output Buffer Journal article
Lee, Tzung-Je, Tsai, Tsung-Yi, Lin, Wei, Chio, U-Fat, Wang, Chua-Chin. A Dynamic Leakage and Slew Rate Compensation Circuit for 40-nm CMOS Mixed-Voltage Output Buffer[J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2017, 25(11), 3166-3174.
Authors:  Lee, Tzung-Je;  Tsai, Tsung-Yi;  Lin, Wei;  Chio, U-Fat;  Wang, Chua-Chin
Favorite | TC[WOS]:7 TC[Scopus]:8  IF:2.8/2.8 | Submit date：2018/10/30
Dynamic Leakage Reduction  I/o Buffer  Mixed-voltage Tolerant  Process-voltage-temperature (Pvt) Variation  Slew Rate Compensation  
Piecewise BJT process spread compensation exploiting base recombination current Conference paper
Sun, Dapeng, Law, Man-Kay, Wang, Bo, Mak, Pui-In, Martins, Rui P.. Piecewise BJT process spread compensation exploiting base recombination current[C], 2017, 890-893.
Authors:  Sun, Dapeng;  Law, Man-Kay;  Wang, Bo;  Mak, Pui-In;  Martins, Rui P.
Favorite | TC[WOS]:0 TC[Scopus]:2 | Submit date：2019/02/11
Bipolar Junction Transistor (Bjt)  Piecewise Process Spread Compensation  Base Recombination Current  
BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS Journal article
Wang B., Law M.K., Bermak A., Tang F.. BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS[J]. IEEE Electron Device Letters, 2015, 36(11), 1111-1113.
Authors:  Wang B.;  Law M.K.;  Bermak A.;  Tang F.
Favorite | TC[WOS]:3 TC[Scopus]:4 | Submit date：2019/02/14
Bipolar Junction Transistor (Bjt) Process Spread  Spread Compensation  Trimless Cmos Voltage Reference  
A passive RFID tag embedded temperature sensor with improved process spreads immunity for a-30̂C to 60̂C sensing range Journal article
Wang B., Law M.-K., Bermak A., Luong H.C.. A passive RFID tag embedded temperature sensor with improved process spreads immunity for a-30̂C to 60̂C sensing range[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61(2), 337.
Authors:  Wang B.;  Law M.-K.;  Bermak A.;  Luong H.C.
Favorite | TC[WOS]:55 TC[Scopus]:63 | Submit date：2018/10/30
Cmos Temperature Sensors  Passive Rfid Tags  Process Compensation  Time-domain Conversion (Tdc)