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Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes Journal article
Zhu B., Tan S.T., Liu W., Lu S., Zhang Y., Chen S., Hasanov N., Kang X., Demir H.V.. Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes[J]. IEEE Photonics Journal, 2016, 8(3).
Authors:  Zhu B.;  Tan S.T.;  Liu W.;  Lu S.;  Zhang Y.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:2 | Submit date：2019/04/08
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