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InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Journal article
Han, Yu, Li, Qiang, Ng, Kar Wei, Zhu, Si, Lau, Kei May. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY, 2018, 29(22).
Authors:  Han, Yu;  Li, Qiang;  Ng, Kar Wei;  Zhu, Si;  Lau, Kei May
Favorite | TC[WOS]:30 TC[Scopus]:32  IF:2.9/2.8 | Submit date：2018/10/30
Inp Nano-ridges  Iii-v On Si  Si Photonics  Ingaas Quantum Wires  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips