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Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots Journal article
Cui, Zhongjie, Mei, Shiliang, Wen, Zhuoqi, Yang, Dan, Qin, Shuaitao, Xiong, Zhiyong, Yang, Bobo, He, Haiyang, Bao, Rui, Qiu, Yi, Chen, Yuanyuan, Zhang, Wanlu, Xie, Fengxian, Xing, Guichuan, Guo, Ruiqian. Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots[J]. Small, 2022, 18(15), 2108120.
Authors:  Cui, Zhongjie;  Mei, Shiliang;  Wen, Zhuoqi;  Yang, Dan;  Qin, Shuaitao; et al.
Favorite | TC[WOS]:33 TC[Scopus]:34  IF:13.0/13.5 | Submit date：2022/05/17
Anion Exchange  Blue Emissive  Halogen Ions  Inp/zns Quantum Dots  Interfaces  
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Journal article
Han, Yu, Li, Qiang, Ng, Kar Wei, Zhu, Si, Lau, Kei May. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY, 2018, 29(22).
Authors:  Han, Yu;  Li, Qiang;  Ng, Kar Wei;  Zhu, Si;  Lau, Kei May
Favorite | TC[WOS]:30 TC[Scopus]:32  IF:2.9/2.8 | Submit date：2018/10/30
Inp Nano-ridges  Iii-v On Si  Si Photonics  Ingaas Quantum Wires  
Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths Journal article
Deshpande S., Bhattacharya I., Malheiros-Silveira G., Ng K.W., Schuster F., Mantei W., Cook K., Chang-Hasnain C.. Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths[J]. ACS Photonics, 2017, 4(3), 695-702.
Authors:  Deshpande S.;  Bhattacharya I.;  Malheiros-Silveira G.;  Ng K.W.;  Schuster F.; et al.
Favorite | TC[WOS]:23 TC[Scopus]:29 | Submit date：2019/04/08
Iii−v  Inp  Leds  Mocvd Growth  Nanowire Laser  Nanowire/nanopillar  Photonic Integrated Circuit  Quantum-well  Silicon Photonics  
Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon Journal article
Li K., Sun H., Ren F., Ng K.W., Tran T.-T.D., Chen R., Chang-Hasnain C.J.. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon[J]. Nano Letters, 2014, 14(1), 183-190.
Authors:  Li K.;  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.; et al.
Favorite | TC[WOS]:43 TC[Scopus]:45 | Submit date：2019/04/08
Inp Nanowire  Nanolaser  Photovoltaics  Silicon  Type-ii  Wurtzite  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)