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2024 [1]
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Laser and Photon... [1]
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Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes
Journal article
Lin, Jianrong, Fang, Wenhui, Tan, Haixing, Zhang, Haojun, Dai, Jingfei, Liu, Ziqing, Liu, Si, Chen, Jianwen, Wu, Runfeng, Xu, Hua, Ng, Kar Wei, Xiao, Peng, Liu, Baiquan. Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes[J]. Laser and Photonics Reviews, 2024.
Authors:
Lin, Jianrong
;
Fang, Wenhui
;
Tan, Haixing
;
Zhang, Haojun
;
Dai, Jingfei
; et al.
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TC[WOS]:
0
TC[Scopus]:
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IF:
9.8
/
11.1
|
Submit date：2024/07/04
Amqled
Broad Spectral Responsivity
High Mobility
Innbo
Phototransistor
