English | 繁體

Search in the results

UM

Browse/Search Results:  1-5 of 5 Help

Selected(0)Clear Items/Page:    Sort:
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Journal article
Han, Yu, Li, Qiang, Ng, Kar Wei, Zhu, Si, Lau, Kei May. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY, 2018, 29(22).
Authors:  Han, Yu;  Li, Qiang;  Ng, Kar Wei;  Zhu, Si;  Lau, Kei May
Favorite | TC[WOS]:30 TC[Scopus]:32  IF:2.9/2.8 | Submit date：2018/10/30
Inp Nano-ridges  Iii-v On Si  Si Photonics  Ingaas Quantum Wires  
Nanopillar lasers directly grown on silicon with heterostructure surface passivation Journal article
Sun H., Ren F., Ng K.W., Tran T.-T.D., Li K., Chang-Hasnain C.J.. Nanopillar lasers directly grown on silicon with heterostructure surface passivation[J]. ACS Nano, 2014, 8(7), 6833-6839.
Authors:  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.;  Li K.; et al.
Favorite | TC[WOS]:26 TC[Scopus]:27 | Submit date：2019/04/08
Core-shell  Iii-v Compound On Si  Lasers  Nanopillars  Nanowires  Surface Passivation  
High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV Journal article
Tran T.-T.D., Sun H., Ng K.W., Ren F., Li K., Lu F., Yablonovitch E., Chang-Hasnain C.J.. High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV[J]. Nano Letters, 2014, 14(6), 3235-3240.
Authors:  Tran T.-T.D.;  Sun H.;  Ng K.W.;  Ren F.;  Li K.; et al.
Favorite | TC[WOS]:18 TC[Scopus]:19 | Submit date：2019/04/08
Iii-v On Si  Micropillars  Nanowires  Photoluminescence  Photovoltaics  Solar Cells  
Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
Ng K.W., Ko W.S., Tran T.-T.D., Chen R., Nazarenko M.V., Lu F., Dubrovskii V.G., Kamp M., Forchel A., Chang-Hasnain C.J.. Unconventional growth mechanism for monolithic integration of III-V on silicon[J]. ACS Nano, 2013, 7(1), 100-107.
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.; et al.
Favorite | TC[WOS]:53 TC[Scopus]:59 | Submit date：2019/04/08
Critical Thickness  Iii-v On Si  Laser  Nanoneedle  Nanopillar  Nanowire  Transmission Electron Microscopy  
GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate Journal article
Chuang L.C., Sedgwick F.G., Chen R., Ko W.S., Moewe M., Ng K.W., Tran T.-T.D., Chang-Hasnain C.. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate[J]. Nano Letters, 2011, 11(2), 385-390.
Authors:  Chuang L.C.;  Sedgwick F.G.;  Chen R.;  Ko W.S.;  Moewe M.; et al.
Favorite | TC[WOS]:92 TC[Scopus]:102 | Submit date：2019/04/08
Apd  Cmos Compatible  Iii-v On Si  Led  Nanoneedle  Nanowire