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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:23 TC[Scopus]:27  IF:2.9/2.9 | Submit date：2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2  
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates Journal article
Zhang B., Liang H., Wang Y., Feng Z., Ng K.W., Lau K.M.. High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates[J]. Journal of Crystal Growth, 2007, 298(SPEC. ISS), 725-730.
Authors:  Zhang B.;  Liang H.;  Wang Y.;  Feng Z.;  Ng K.W.; et al.
Favorite | TC[WOS]:68 TC[Scopus]:70 | Submit date：2019/04/08
A1. X-ray Diffraction  A3. Metalorganic Chemical Vapor Deposition  B1. Nitride  B2. Semiconductor Iii-v Materials  B3. Light-emitting Diodes