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The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors Journal article
Liu, Bingtao, Huan, Changmeng, Cai, Yongqing, Ke, Qingqing. The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors[J]. Journal of Electronic Materials, 2024, 53(11), 7057-7064.
Authors:  Liu, Bingtao;  Huan, Changmeng;  Cai, Yongqing;  Ke, Qingqing
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.2/1.9 | Submit date：2024/10/10
Ferroelectric Negative Capacitance  Oxygen Vacancies  High-mobility Ions  Hysteresis-free  
Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes Journal article
Lin, Jianrong, Fang, Wenhui, Tan, Haixing, Zhang, Haojun, Dai, Jingfei, Liu, Ziqing, Liu, Si, Chen, Jianwen, Wu, Runfeng, Xu, Hua, Ng, Kar Wei, Xiao, Peng, Liu, Baiquan. Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes[J]. Laser and Photonics Reviews, 2024.
Authors:  Lin, Jianrong;  Fang, Wenhui;  Tan, Haixing;  Zhang, Haojun;  Dai, Jingfei; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:9.8/11.1 | Submit date：2024/07/04
Amqled  Broad Spectral Responsivity  High Mobility  Innbo  Phototransistor  
The mechanisms of high mobility of a glacial debris flow using the Pudasaini-Mergili multi-phase modeling Journal article
Wang,Tengfei, Huang,Taosheng, Shen,Ping, Peng,Dalei, Zhang,Limin. The mechanisms of high mobility of a glacial debris flow using the Pudasaini-Mergili multi-phase modeling[J]. Engineering Geology, 2023, 322, 107186.
Authors:  Wang,Tengfei;  Huang,Taosheng;  Shen,Ping;  Peng,Dalei;  Zhang,Limin
Favorite | TC[WOS]:2 TC[Scopus]:3  IF:6.9/7.6 | Submit date：2023/08/03
Entrainment  Glacial Debris Flow  High Mobility  Initial Ice/water Content  Multi-phase Modeling  Phase Transition  
A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology Journal article
Tianxiang Wu, Jipeng Wei, Hongquan Liu, Shunli Ma, Yong Chen, Junyan Ren. A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology[J]. Electronics (Switzerland), 2021, 10(12).
Authors:  Tianxiang Wu;  Jipeng Wei;  Hongquan Liu;  Shunli Ma;  Yong Chen; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9  IF:2.6/2.6 | Submit date：2021/10/28
Gaas Process  Pseudomorphic High-electron-mobility Transistor (Phemt)  Single-pole 32-throw (Sp32t) Switch  Sub-6g  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:23 TC[Scopus]:27  IF:2.9/2.9 | Submit date：2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2  
Boosting metabolite characterization using ion mobility based high-resolution MSn Conference proceedings
Authors:  Yan, Zhixiang;  Yan, Ru
Favorite |  | Submit date：2022/08/15
Metabolomics  Metabolite Characterization  Ion Mobility  High-resolution Msn