English | 繁體

Search in the results

UM

Browse/Search Results:  1-4 of 4 Help

Selected(0)Clear Items/Page:    Sort:
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Kuo H.C., Kuo J.M., Wang Y.C., Lin C.H., Chen H., Stillman G.E.. Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy[J]. Journal of Electronic Materials, 1997, 26(8), 944-948.
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.; et al.
Favorite | TC[WOS]:13 TC[Scopus]:12 | Submit date：2019/04/08
Alinp/gaas  Band Offset  Gainp/gaas  Gas Source Molecular Beam Epitaxy (Gsmbe)  Photoluminescence (Pl)  Photoluminescence Excitation (Ple)  Three-band Kane  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Kuo H.C., Kuo J.M., Wang Y.C., Lin C.H., Chen H., Stillman G.E.. Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy[J]. Journal of Electronic Materials, 1997, 26(8), 944-948.
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.; et al.
Favorite | TC[WOS]:13 TC[Scopus]:12 | Submit date：2019/04/08
Alinp/gaas  Band Offset  Gainp/gaas  Gas Source Molecular Beam Epitaxy (Gsmbe)  Photoluminescence (Pl)  Photoluminescence Excitation (Ple)  Three-band Kane