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Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Kuo H.C., Kuo J.M., Wang Y.C., Lin C.H., Chen H., Stillman G.E.. Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy[J]. Journal of Electronic Materials, 1997, 26(8), 944-948.
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.; et al.
Favorite | TC[WOS]:13 TC[Scopus]:12 | Submit date：2019/04/08
Alinp/gaas  Band Offset  Gainp/gaas  Gas Source Molecular Beam Epitaxy (Gsmbe)  Photoluminescence (Pl)  Photoluminescence Excitation (Ple)  Three-band Kane  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Kuo H.C., Kuo J.M., Wang Y.C., Lin C.H., Chen H., Stillman G.E.. Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy[J]. Journal of Electronic Materials, 1997, 26(8), 944-948.
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.; et al.
Favorite | TC[WOS]:13 TC[Scopus]:12 | Submit date：2019/04/08
Alinp/gaas  Band Offset  Gainp/gaas  Gas Source Molecular Beam Epitaxy (Gsmbe)  Photoluminescence (Pl)  Photoluminescence Excitation (Ple)  Three-band Kane