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MAK PUI IN [1]
LAW MAN KAY [1]
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2018 [1]
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英語English [1]
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Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy
Journal article
Sun, Dapeng, Zhang, Tan-Tan, Law, Man-Kay, Mak, Pui-In, Martins, Rui Paulo. Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy[J]. ELECTRONICS LETTERS, 2018, 54(22), 1270-1271.
Authors:
Sun, Dapeng
;
Zhang, Tan-Tan
;
Law, Man-Kay
;
Mak, Pui-In
;
Martins, Rui Paulo
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Submit date：2019/01/17
Resistors
Calibration
Cmos Integrated Circuits
Bipolar Transistors
Temperature Sensors
First-batch-only Calibration Parameters
Batch-to-batch Inaccuracy
Piecewise Bjt Process
Compensation Property
Base Recombination Current
Base-emitter Voltage
Cmos Temperature Sensor
Process Compensated Bjt
Intra-die Variation
Spread Compensation Property
On-chip Resistors
Inter-die Variation
Current 3
0 Mua
Voltage 1
2 v
Temperature-40 Degc To 125 Degc
Size 0
036 Mm
