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Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy Journal article
Sun, Dapeng, Zhang, Tan-Tan, Law, Man-Kay, Mak, Pui-In, Martins, Rui Paulo. Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy[J]. ELECTRONICS LETTERS, 2018, 54(22), 1270-1271.
Authors:  Sun, Dapeng;  Zhang, Tan-Tan;  Law, Man-Kay;  Mak, Pui-In;  Martins, Rui Paulo
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:0.7/0.9 | Submit date：2019/01/17
Resistors  Calibration  Cmos Integrated Circuits  Bipolar Transistors  Temperature Sensors  First-batch-only Calibration Parameters  Batch-to-batch Inaccuracy  Piecewise Bjt Process  Compensation Property  Base Recombination Current  Base-emitter Voltage  Cmos Temperature Sensor  Process Compensated Bjt  Intra-die Variation  Spread Compensation Property  On-chip Resistors  Inter-die Variation  Current 3  0 Mua  Voltage 1  2 v  Temperature-40 Degc To 125 Degc  Size 0  036 Mm  
Piecewise BJT process spread compensation exploiting base recombination current Conference paper
Sun, Dapeng, Law, Man-Kay, Wang, Bo, Mak, Pui-In, Martins, Rui P.. Piecewise BJT process spread compensation exploiting base recombination current[C], 2017, 890-893.
Authors:  Sun, Dapeng;  Law, Man-Kay;  Wang, Bo;  Mak, Pui-In;  Martins, Rui P.
Favorite | TC[WOS]:0 TC[Scopus]:2 | Submit date：2019/02/11
Bipolar Junction Transistor (Bjt)  Piecewise Process Spread Compensation  Base Recombination Current