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THE STATE KEY LA... [1]
INSTITUTE OF MIC... [1]
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MAK PUI IN [1]
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Journal article [2]
Date Issued
2016 [2]
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英語English [2]
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IEEE Transaction... [2]
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SCIE [2]
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A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power
Journal article
U. R. Jagadheswaran, Harikrishnan Ramiah, Pui-In Mak, Rui P. Martins. A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power[J]. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(1), 200-209.
Authors:
U. R. Jagadheswaran
;
Harikrishnan Ramiah
;
Pui-In Mak
;
Rui P. Martins
Favorite
|
TC[WOS]:
26
TC[Scopus]:
32
|
Submit date：2019/02/11
Adjacent Channel Leakage Ratio (Aclr)
Error Vector Magnitude (Evm)
Gallium-arsenide (Gaas)
Long-term Evolution (Lte)
Power Amplifier (Pa)
Power-added Efficiency (Pae)
Quadrature Amplitude Modulation (Qam)
A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power
Journal article
Jagadheswaran,U. R., Ramiah,Harikrishnan, Mak,Pui In, Martins,Rui P.. A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power[J]. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(1), 200-209.
Authors:
Jagadheswaran,U. R.
;
Ramiah,Harikrishnan
;
Mak,Pui In
;
Martins,Rui P.
Favorite
|
TC[WOS]:
26
TC[Scopus]:
32
IF:
4.1
/
4.2
|
Submit date：2021/03/09
Adjacent Channel Leakage Ratio (Aclr)
Error Vector Magnitude (Evm)
Gallium-arsenide (Gaas)
Long-term Evolution (Lte)
Power Amplifier (Pa)
Power-added Efficiency (Pae)
Quadrature Amplitude Modulation (Qam)
