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The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors Journal article
Liu, Bingtao, Huan, Changmeng, Cai, Yongqing, Ke, Qingqing. The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors[J]. Journal of Electronic Materials, 2024, 53(11), 7057-7064.
Authors:  Liu, Bingtao;  Huan, Changmeng;  Cai, Yongqing;  Ke, Qingqing
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.2/1.9 | Submit date：2024/10/10
Ferroelectric Negative Capacitance  Oxygen Vacancies  High-mobility Ions  Hysteresis-free  
Investigating the Reliability of a Negative Capacitance Field Effect Transistor Regarding the Electric Field Across the Oxide Layer Journal article
Liu, Bingtao, Sun, Hanxi, Huan, Changmeng, Jia, Renxu, Cai, Yongqing, Ke, Qingqing. Investigating the Reliability of a Negative Capacitance Field Effect Transistor Regarding the Electric Field Across the Oxide Layer[J]. Journal of Electronic Materials, 2023, 52, 3180-3187.
Authors:  Liu, Bingtao;  Sun, Hanxi;  Huan, Changmeng;  Jia, Renxu;  Cai, Yongqing; et al.
Favorite | TC[WOS]:2 TC[Scopus]:2  IF:2.2/1.9 | Submit date：2023/06/07
Electric Field Distribution  Negative Capacitance  Oxide Reliability  Tcad  
On the Secrecy Design of STAR-RIS assisted Uplink NOMA Networks Journal article
Zhang, Zheng, Chen, Jian, Liu, Yuanwei, Wu, Qingqing, He, Bingtao, Yang, Long. On the Secrecy Design of STAR-RIS assisted Uplink NOMA Networks[J]. IEEE Transactions on Wireless Communications, 2022, 21(12), 11207 - 11221.
Authors:  Zhang, Zheng;  Chen, Jian;  Liu, Yuanwei;  Wu, Qingqing;  He, Bingtao; et al.
Favorite | TC[WOS]:67 TC[Scopus]:94  IF:8.9/8.6 | Submit date：2022/10/07
Non-orthogonal Multiple Access  Physical Layer Security  Star-ris  Secrecy Beamforming Design  
Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2 Journal article
Huan, Changmeng, Wang, Pu, Liu, Bingtao, He, Binghan, Cai, Yongqing, Ke, Qingqing. Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2[J]. Journal of Materials Chemistry C, 2022, 10(30), 10995-11004.
Authors:  Huan, Changmeng;  Wang, Pu;  Liu, Bingtao;  He, Binghan;  Cai, Yongqing; et al.
Favorite | TC[WOS]:14 TC[Scopus]:14  IF:5.7/6.0 | Submit date：2022/10/07