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III-V micro- And nano-lasers deposited on amorphous SiO2 Journal article
Han, Yu, Yan, Zhao, Ng, Wai Kit, Xue, Ying, Ng, Kar Wei, Wong, Kam Sing, Lau, Kei May. III-V micro- And nano-lasers deposited on amorphous SiO2[J]. Applied Physics Letters, 2020, 116(17).
Authors:  Han, Yu;  Yan, Zhao;  Ng, Wai Kit;  Xue, Ying;  Ng, Kar Wei; et al.
Favorite | TC[WOS]:3 TC[Scopus]:5  IF:3.5/3.5 | Submit date：2021/12/06
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2 Journal article
Lu, Xing, Zhou, Xianda, Jiang, Huaxing, Ng, Kar Wei, Chen, Zimin, Pei, Yanli, Lau, Kei May, Wang, Gang. 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2[J]. IEEE Electron Device Letters, 2020, 41(3), 449-452.
Authors:  Lu, Xing;  Zhou, Xianda;  Jiang, Huaxing;  Ng, Kar Wei;  Chen, Zimin; et al.
Favorite | TC[WOS]:159 TC[Scopus]:168  IF:4.1/4.2 | Submit date：2021/09/17
Breakdown Voltage  Heterojunction  Nio  P-n Diode  Reverse Leakage Current  Β-=ga2o3  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:23 TC[Scopus]:27  IF:2.9/2.9 | Submit date：2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2  
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Journal article
Han, Yu, Li, Qiang, Ng, Kar Wei, Zhu, Si, Lau, Kei May. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY, 2018, 29(22).
Authors:  Han, Yu;  Li, Qiang;  Ng, Kar Wei;  Zhu, Si;  Lau, Kei May
Favorite | TC[WOS]:30 TC[Scopus]:32  IF:2.9/2.8 | Submit date：2018/10/30
Inp Nano-ridges  Iii-v On Si  Si Photonics  Ingaas Quantum Wires  
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths Journal article
Han, Yu, Li, Qiang, Zhu, Si, Ng, Kar Wei, Lau, Kei May. Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths[J]. APPLIED PHYSICS LETTERS, 2017, 111(21).
Authors:  Han, Yu;  Li, Qiang;  Zhu, Si;  Ng, Kar Wei;  Lau, Kei May
Favorite | TC[WOS]:25 TC[Scopus]:28  IF:3.5/3.5 | Submit date：2018/10/30