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Observation and Suppression of Stacking Interface States in Sandwich-Structured Quantum Dot Light-Emitting Diodes Journal article
Dong, J.Y., Ng, K.W., Song, Y.M., Li, J.L., Kong, Y.C., Wang, M.W., Xu, J.C., Li, L., Chen, S., Tang, Z.K., Wang, S.P.. Observation and Suppression of Stacking Interface States in Sandwich-Structured Quantum Dot Light-Emitting Diodes[J]. ACS Applied Materials & Interfaces, 2021, 13(47), 56630-56637.
Authors:  Dong, J.Y.;  Ng, K.W.;  Song, Y.M.;  Li, J.L.;  Kong, Y.C.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:8  IF:8.3/8.7 | Submit date：2022/08/01
Sandwich Structure  Quantum Dot Light-emitting Diodes  Interface States  Electron Transport Layer  Electron Injection  
法律關係理論的傳播脈絡與爭議焦點 Journal article
Tong, I. C., Chen, Y.C.. 法律關係理論的傳播脈絡與爭議焦點[J]. 国家检察官学院学报, 2019, 83-98.
Authors:  Tong, I. C.;  Chen, Y.C.
Favorite |  | Submit date：2022/08/31
法律關係理論  
Antipsychotic polypharmacy in schizophrenia patients in China and its association with treatment satisfaction and quality of life: Findings of the third national survey on use of psychotropic medications in China Journal article
Li,Qian, Xiang,Yu Tao, Su,Yun Ai, Shu,Liang, Yu,Xin, Chiu,Helen F.K., Correll,Christoph U., Ungvari,Gabor S., Lai,Kelly Y.C., Ma,Cui, Wang,Gao Hua, Bai,Pei Shen, Li,Tao, Sun,Li Zhong, Shi,Jian Guo, Chen,Xian Sheng, Mei,Qi Yi, Li,Ke Qing, Si,Tian Mei. Antipsychotic polypharmacy in schizophrenia patients in China and its association with treatment satisfaction and quality of life: Findings of the third national survey on use of psychotropic medications in China[J]. Australian and New Zealand Journal of Psychiatry, 2015, 49(2), 129-136.
Authors:  Li,Qian;  Xiang,Yu Tao;  Su,Yun Ai;  Shu,Liang;  Yu,Xin; et al.
Favorite | TC[WOS]:37 TC[Scopus]:40  IF:4.0/4.9 | Submit date：2021/03/02
Antipsychotic Polypharmacy  Prescription Patterns  Schizophrenia  
External Learning, Market Dynamics, and Radical Innovation: Evidence from China's High-Tech Firms Journal article
Bao, Y.C., Chen, X. Y., Zhou, K.Z.. External Learning, Market Dynamics, and Radical Innovation: Evidence from China's High-Tech Firms[J]. Journal of Business Research, 2012, 1226-1233.
Authors:  Bao, Y.C.;  Chen, X. Y.;  Zhou, K.Z.
Favorite |   IF:10.5/11.2 | Submit date：2022/08/29
Externallearning  Technical Learning  Administrative Learning  Radical Innovation  Technological Turbulence  Competitive Intensity  
Beneficial effects of danshensu, an active component of Salvia miltiorrhiza, on homocysteine metabolism via the trans-sulphuration pathway in rats Journal article
Cao Y.G., Chai J.G., Chen Y.C., Zhao J., Zhou J., Shao J.P., Ma C., Liu X.D., Liu X.Q.. Beneficial effects of danshensu, an active component of Salvia miltiorrhiza, on homocysteine metabolism via the trans-sulphuration pathway in rats[J]. British Journal of Pharmacology, 2009, 157(3), 482-490.
Authors:  Cao Y.G.;  Chai J.G.;  Chen Y.C.;  Zhao J.;  Zhou J.; et al.
Favorite | TC[WOS]:23 TC[Scopus]:31 | Submit date：2018/12/28
Danshensu  Homocysteine  Polyphenols  Salvia Miltiorrhiza  Trans-sulphuration  
Effects of IL-7 and dexamethasone: Induction of CD25, the high affinity IL-2 receptor, on human CD4+ cells Journal article
Il Y.C., Hui F.D., Zhang X., Hassanein N.M.A., Howard O.M.Z., Oppenheim J.J., Chen X.. Effects of IL-7 and dexamethasone: Induction of CD25, the high affinity IL-2 receptor, on human CD4+ cells[J]. Cellular Immunology, 2004, 232(1-2), 57-63.
Authors:  Il Y.C.;  Hui F.D.;  Zhang X.;  Hassanein N.M.A.;  Howard O.M.Z.; et al.
Favorite | TC[WOS]:13 TC[Scopus]:13 | Submit date：2018/11/06
cd4+cd25+ Regulatory t Lymphocytes  Dexamethasone  Interleukin-7  Suppression/anergy  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Kuo H.C., Kuo J.M., Wang Y.C., Lin C.H., Chen H., Stillman G.E.. Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy[J]. Journal of Electronic Materials, 1997, 26(8), 944-948.
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.; et al.
Favorite | TC[WOS]:13 TC[Scopus]:12 | Submit date：2019/04/08
Alinp/gaas  Band Offset  Gainp/gaas  Gas Source Molecular Beam Epitaxy (Gsmbe)  Photoluminescence (Pl)  Photoluminescence Excitation (Ple)  Three-band Kane  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)