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Characteristics of cybercrimes: evidence from Chinese judgment documents
Journal article
Tianji Cai, Li Du, Yanyu Xin, Lennon Y.C. Chang. Characteristics of cybercrimes: evidence from Chinese judgment documents[J]. POLICE PRACTICE AND RESEARCH, 2018, 19(6), 582-595.
Authors:
Tianji Cai
;
Li Du
;
Yanyu Xin
;
Lennon Y.C. Chang
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TC[WOS]:
8
TC[Scopus]:
10
IF:
1.4
/
1.8
|
Submit date:2019/06/25
Cybercrimes
Sentencing Documents
Underground Economy
Value Chain
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm
Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:
Sengupta D.K.
;
Jackson S.L.
;
Curtis A.P.
;
Fang W.
;
Malin J.I.
; et al.
Favorite
|
TC[WOS]:
7
TC[Scopus]:
7
|
Submit date:2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)
Inp/ingaas
Quantum-well Infrared Photodectors (Qwips)
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells
Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:
Sengupta D.K.
;
Jackson S.L.
;
Curtis A.P.
;
Fang W.
;
Malin J.I.
; et al.
Favorite
|
TC[WOS]:
1
TC[Scopus]:
1
|
Submit date:2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)
Ingaas/inp
Quantum Well Infrared Photodetectors Qwips
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm
Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:
Sengupta D.K.
;
Jackson S.L.
;
Curtis A.P.
;
Fang W.
;
Malin J.I.
; et al.
Favorite
|
TC[WOS]:
7
TC[Scopus]:
7
|
Submit date:2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)
Inp/ingaas
Quantum-well Infrared Photodectors (Qwips)
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells
Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:
Sengupta D.K.
;
Jackson S.L.
;
Curtis A.P.
;
Fang W.
;
Malin J.I.
; et al.
Favorite
|
TC[WOS]:
1
TC[Scopus]:
1
|
Submit date:2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)
Ingaas/inp
Quantum Well Infrared Photodetectors Qwips