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High brightness InP micropillars grown on silicon with Fermi-level splits larger than 1 eV Conference paper
Tran T., Sun H., Ren F., Ng K.W., Li K., Lu F., Yablonovitch E., Chang-Hasnain C.J.. High brightness InP micropillars grown on silicon with Fermi-level splits larger than 1 eV[C], 2013, 836-839.
Authors:  Tran T.;  Sun H.;  Ren F.;  Ng K.W.;  Li K.; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0 | Submit date：2019/04/08
Iii-v Semiconductor Materials  Indium Phosphide  Photoluminescence  Silicon