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InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate Conference paper
Ko W.S., Bhattacharya I., Tran T., Ng K.W., Chang-Hasnain C.. InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate[C], 2014.
Authors:  Ko W.S.;  Bhattacharya I.;  Tran T.;  Ng K.W.;  Chang-Hasnain C.
Favorite | TC[WOS]:2 TC[Scopus]:2 | Submit date：2019/04/08
Characteristics of InP nanoneedles grown on silicon by low-temperature MOCVD Conference paper
Li K., Ren F., Chen R., Tran T., Ng K.W., Chang-Hasnain C.J.. Characteristics of InP nanoneedles grown on silicon by low-temperature MOCVD[C], 2012, 85-87.
Authors:  Li K.;  Ren F.;  Chen R.;  Tran T.;  Ng K.W.; et al.
Favorite | TC[WOS]:0 TC[Scopus]:1 | Submit date：2019/04/08
Indium Phosphide  Nanostructured Materials  Optoelectronic Devices  Photoluminescence  Semiconductor Lasers  Time Measurement  Ultrafast Optics