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Patent NumberCN 113354668 B
Status已授權 Granted
荧光探针材料、其制备方法及应用
Year Issued2024
2024-04-02
Application NumberCN202110773049.0
Application Date2021-07-08
Rights Holder澳门大学
李鹏; 卢健
Date Available2021-09-07
Country中国 China
Subtype发明专利 Invention
Abstract

本发明公开了荧光探针材料、其制备方法及应用,涉及发光晶体材料技术领域。荧光探针材料的化学式为[Eu(ndc)(Hndc)(DMF) 2]n;其中,ndc为ndc2‑,表示1,4‑萘二羧酸完全脱质子化后的产物;Hndc为Hndc‑,表示1,4‑萘二羧酸未完全脱质子化后的产物;DMF为N,N‑二甲基甲酰胺;n大于或等于2。该荧光探针材料能够在250~330nm的激发光照射下能够表现出红光发射现象,在Pb2+、Cu2+、Cd2+离子的痕量检测方面中具有很高的应用价值。

Language中文Chinese
Open (Notice) NumberCN113354668A
IPC Classification NumberC07f5/00 ; C09k11/06 ; G01n21/64
Patent Agent陈秋梦
Agency北京超凡宏宇专利代理事务所(特殊普通合伙) 11463
Document TypePatent
CollectionInstitute of Chinese Medical Sciences
Recommended Citation
GB/T 7714
李鹏,卢健. 荧光探针材料、其制备方法及应用. CN 113354668 B[P]. 2024-04-02.
APA 李鹏., & 卢健 (2021-07-08). 荧光探针材料、其制备方法及应用.
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