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A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C
Bo Wang1; Man-Kay Law2; Amine Bermak1
2022-02
Conference NameIEEE International Solid-State Circuits Conference
Source PublicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume2022-February
Pages72-74
Conference Date20-26 February 2022
Conference PlaceSan Francisco, CA, USA
Abstract

Integrated temperature sensors for industrial digital transformation such as turbine and bearing monitoring should exhibit low power consumption and high energy efficiency with moderate inaccuracy over a wide sensing range (e.g., > 150°C) to achieve autonomous operation under a limited energy budget. Even though resistor-based temperature sensors can achieve a superior sub-pJ.K2 resolution-FoM [1], they typically require a 2-point trim together with a high-order nonlinearity correction (6th-order in [2]), inevitably burdening the processing cost. In contrast, BJT-based temperature sensors in bulk or SOI CMOS can achieve accurate sensing at high temperature with only 1-point trim and simple digital processing [3], [4]. However, they can suffer from a degraded energy efficiency at high temperature for ensuring the sensing resolution and/or accuracy (e.q., 3× increase in bias current for improving the 3-inaccuracy from pm 0.6C to pm 0.4C in [3]). This paper describes a BJT-based temperature sensor capable of wide-range operation from -50°C to 180°C. By employing a nonlinear readout and the proposed subranging, double-sampling, and constant-biasing techniques, this work achieves a high resolution-FoM over the entire sensing range (9.7pJ.K2 at room temperature and 7.2pJ.K2 at 150°C), corresponding to a 6-to-10× improvement when compared with prior BJT-based wide-range designs [3], [4]. We further employ dynamic error-correction [5] and switch-leakage compensation to effectively suppress the mismatch- and leakage-induced errors, resulting in a high precision of pm 0.46C(3).

KeywordTemperature Sensor Subranging Readout Low-leakage Switch Double-sampling Adc Calibration Bjt
DOI10.1109/ISSCC42614.2022.9731647
URLView the original
Indexed BySCIE
Language中文Chinese
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000869385500001
Scopus ID2-s2.0-85128294322
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Citation statistics
Document TypeConference paper
CollectionINSTITUTE OF MICROELECTRONICS
Corresponding AuthorBo Wang
Affiliation1.Hamad Bin Khalifa University, Doha, Qatar
2.University of Macau, Macau, China
Recommended Citation
GB/T 7714
Bo Wang,Man-Kay Law,Amine Bermak. A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C[C], 2022, 72-74.
APA Bo Wang., Man-Kay Law., & Amine Bermak (2022). A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2022-February, 72-74.
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