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Status | 已發表Published |
A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C | |
Bo Wang1; Man-Kay Law2; Amine Bermak1 | |
2022-02 | |
Conference Name | IEEE International Solid-State Circuits Conference |
Source Publication | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
Volume | 2022-February |
Pages | 72-74 |
Conference Date | 20-26 February 2022 |
Conference Place | San Francisco, CA, USA |
Abstract | Integrated temperature sensors for industrial digital transformation such as turbine and bearing monitoring should exhibit low power consumption and high energy efficiency with moderate inaccuracy over a wide sensing range (e.g., > 150°C) to achieve autonomous operation under a limited energy budget. Even though resistor-based temperature sensors can achieve a superior sub-pJ.K2 resolution-FoM [1], they typically require a 2-point trim together with a high-order nonlinearity correction (6th-order in [2]), inevitably burdening the processing cost. In contrast, BJT-based temperature sensors in bulk or SOI CMOS can achieve accurate sensing at high temperature with only 1-point trim and simple digital processing [3], [4]. However, they can suffer from a degraded energy efficiency at high temperature for ensuring the sensing resolution and/or accuracy (e.q., 3× increase in bias current for improving the 3-inaccuracy from pm 0.6C to pm 0.4C in [3]). This paper describes a BJT-based temperature sensor capable of wide-range operation from -50°C to 180°C. By employing a nonlinear readout and the proposed subranging, double-sampling, and constant-biasing techniques, this work achieves a high resolution-FoM over the entire sensing range (9.7pJ.K2 at room temperature and 7.2pJ.K2 at 150°C), corresponding to a 6-to-10× improvement when compared with prior BJT-based wide-range designs [3], [4]. We further employ dynamic error-correction [5] and switch-leakage compensation to effectively suppress the mismatch- and leakage-induced errors, resulting in a high precision of pm 0.46C(3). |
Keyword | Temperature Sensor Subranging Readout Low-leakage Switch Double-sampling Adc Calibration Bjt |
DOI | 10.1109/ISSCC42614.2022.9731647 |
URL | View the original |
Indexed By | SCIE |
Language | 中文Chinese |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000869385500001 |
Scopus ID | 2-s2.0-85128294322 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | INSTITUTE OF MICROELECTRONICS |
Corresponding Author | Bo Wang |
Affiliation | 1.Hamad Bin Khalifa University, Doha, Qatar 2.University of Macau, Macau, China |
Recommended Citation GB/T 7714 | Bo Wang,Man-Kay Law,Amine Bermak. A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C[C], 2022, 72-74. |
APA | Bo Wang., Man-Kay Law., & Amine Bermak (2022). A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2022-February, 72-74. |
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