UM  > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Residential Collegefalse
Status已發表Published
Large magnetoresistance and magnetostrain in the batch-processed (Mn2Sb)1-xBix crystals (x = 0.06, 0.08, 0.10, 0.12)
Li, Jiali1,2; Gao, Tian1; Xu, Kun1,2; Ni, Jiaren1,2; Cao, Yiming2; Zhang, Yuanlei2; Kang, Yanru2; Wei, Shengxian2; He, Xijia2; Yin, Xunqing3; Li, Zhe2
2022-08-01
Source PublicationJournal of Magnetism and Magnetic Materials
ISSN0304-8853
Volume555Pages:169348
Abstract

We investigate the effects of Bi substitution on the structure, magnetization, magnetoresistance, and magnetostrain in single crystals of (MnSb)Bi (x = 0.06, 0.08, 0.1, and 0.12). It is found that the element Bi can be partially substituted for Sb in the tetragonal MnSb main phase, and partially forms the MnBi and Bi-rich secondary phases. The introduction of Bi causes the simultaneous lattice shrinkages in a and c for the main phase, and also enhances the transition temperature of the first-order magnetoelastic ferrimagnetic-antiferromagnetic transition. Such an enhancement in transition temperature due to contraction of the unit-cell volume contraction is also experimentally proven based on the thermomagnetic curves under hydrostatic pressure for a crystal with × = 0.12. The volume contraction rate due to hydrostatic pressure is deduced to be −0.0386 Å/GPa. Moreover, the highest values of in-plane magnetoresistance (∼-30%) and magnetostrain (∼−1448 ppm) with good reversibility are attained at 120 K under 30 kOe, which was proven to be the optimal magnetic field. Our experimental results show that MnSb-based intermetallic compounds can be considered promising candidates for low-cost, multifunctional magnetic materials.

KeywordFirst-order Magnetoelastic Transition Hydrostatic Pressure Magnetoresistance Magnetostrain
DOI10.1016/j.jmmm.2022.169348
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Condensed Matter
WOS IDWOS:000806148100006
PublisherELSEVIER, RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
Scopus ID2-s2.0-85127952204
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorXu, Kun; Cao, Yiming
Affiliation1.College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai, 200090, China
2.College of Physics and Electronic Engineering, Center for Magnetic Materials and Devices, Qujing Normal University, Qujing, 655011, China
3.Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
Recommended Citation
GB/T 7714
Li, Jiali,Gao, Tian,Xu, Kun,et al. Large magnetoresistance and magnetostrain in the batch-processed (Mn2Sb)1-xBix crystals (x = 0.06, 0.08, 0.10, 0.12)[J]. Journal of Magnetism and Magnetic Materials, 2022, 555, 169348.
APA Li, Jiali., Gao, Tian., Xu, Kun., Ni, Jiaren., Cao, Yiming., Zhang, Yuanlei., Kang, Yanru., Wei, Shengxian., He, Xijia., Yin, Xunqing., & Li, Zhe (2022). Large magnetoresistance and magnetostrain in the batch-processed (Mn2Sb)1-xBix crystals (x = 0.06, 0.08, 0.10, 0.12). Journal of Magnetism and Magnetic Materials, 555, 169348.
MLA Li, Jiali,et al."Large magnetoresistance and magnetostrain in the batch-processed (Mn2Sb)1-xBix crystals (x = 0.06, 0.08, 0.10, 0.12)".Journal of Magnetism and Magnetic Materials 555(2022):169348.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, Jiali]'s Articles
[Gao, Tian]'s Articles
[Xu, Kun]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, Jiali]'s Articles
[Gao, Tian]'s Articles
[Xu, Kun]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, Jiali]'s Articles
[Gao, Tian]'s Articles
[Xu, Kun]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.