Residential College | false |
Status | 已發表Published |
A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors | |
Mao, Xiangyu1,2; Lu, Yan1,2; Martins, Rui P.1,2 | |
2021 | |
Source Publication | IEEE Journal of Solid-State Circuits |
ISSN | 0018-9200 |
Volume | 57Issue:6Pages:1841-1853 |
Abstract | High-performance microprocessors need high current (ampere-level), high accuracy, and fast-response power supplies. Comparing to analog and digital low-dropout (LDO) regulators, the switching LDO can be a better candidate for such requirements, as it can drive large power transistor(s) fast and accurately. However, conventional switching LDOs need large load capacitance to reduce the output ripple, which restricts their applications. This article presents a 1.5-A fully-integrated switching LDO for microprocessors, with an easily scalable load capability. Here, we introduce three techniques together to relief the output capacitance requirement: 1) four-phase 500-MHz pulsewidth modulation (PWM) with inherent current balancing; 2) current-limited power cells resisting processor voltage and temperature (PVT) variations; and 3) hybrid fast-slow power transistors. Therefore, we reduce significantly the load capacitance to maximum load current ratio CL/IMAX when compared with the prior switching LDOs. Also, the proposed dual-loop architecture not only achieves a fast transient response, but also provides high-accuracy regulation. In addition, we design the tunable active voltage positioning (AVP). Fabricated in 28-nm CMOS, the proposed switching LDO measures a maximum 70-mV undershoot with a 1-A load current step with 10-ns edge time. The measured load regulation is 1 mV/A and the line regulation is 1.5 mV/V. Also, we obtain a good power supply rejection (PSR) of -63 dB at 10 kHz and -20 dB at 1 MHz. The PWM automatically moves to a pulse-skipping mode at light load, reducing the quiescent current to 1.8 mA, while the peak current efficiency is 99.27%. |
Keyword | Active Voltage Positioning (Avp) Dual Loop Fast Response Low-dropout (Ldo) Regulator Pulsewidth Modulation (Pwm) Control Switching Ldo Regulator. |
DOI | 10.1109/JSSC.2021.3129620 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000732322600001 |
Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 |
Scopus ID | 2-s2.0-85121385528 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) INSTITUTE OF MICROELECTRONICS |
Corresponding Author | Lu, Yan |
Affiliation | 1.State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau. 2.Univ Macau, FST DECE, Macau, Peoples R China |
First Author Affilication | Faculty of Science and Technology |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Mao, Xiangyu,Lu, Yan,Martins, Rui P.. A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors[J]. IEEE Journal of Solid-State Circuits, 2021, 57(6), 1841-1853. |
APA | Mao, Xiangyu., Lu, Yan., & Martins, Rui P. (2021). A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors. IEEE Journal of Solid-State Circuits, 57(6), 1841-1853. |
MLA | Mao, Xiangyu,et al."A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors".IEEE Journal of Solid-State Circuits 57.6(2021):1841-1853. |
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