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A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors
Mao, Xiangyu1,2; Lu, Yan1,2; Martins, Rui P.1,2
2021
Source PublicationIEEE Journal of Solid-State Circuits
ISSN0018-9200
Volume57Issue:6Pages:1841-1853
Abstract

High-performance microprocessors need high current (ampere-level), high accuracy, and fast-response power supplies. Comparing to analog and digital low-dropout (LDO) regulators, the switching LDO can be a better candidate for such requirements, as it can drive large power transistor(s) fast and accurately. However, conventional switching LDOs need large load capacitance to reduce the output ripple, which restricts their applications. This article presents a 1.5-A fully-integrated switching LDO for microprocessors, with an easily scalable load capability. Here, we introduce three techniques together to relief the output capacitance requirement: 1) four-phase 500-MHz pulsewidth modulation (PWM) with inherent current balancing; 2) current-limited power cells resisting processor voltage and temperature (PVT) variations; and 3) hybrid fast-slow power transistors. Therefore, we reduce significantly the load capacitance to maximum load current ratio CL/IMAX when compared with the prior switching LDOs. Also, the proposed dual-loop architecture not only achieves a fast transient response, but also provides high-accuracy regulation. In addition, we design the tunable active voltage positioning (AVP). Fabricated in 28-nm CMOS, the proposed switching LDO measures a maximum 70-mV undershoot with a 1-A load current step with 10-ns edge time. The measured load regulation is 1 mV/A and the line regulation is 1.5 mV/V. Also, we obtain a good power supply rejection (PSR) of -63 dB at 10 kHz and -20 dB at 1 MHz. The PWM automatically moves to a pulse-skipping mode at light load, reducing the quiescent current to 1.8 mA, while the peak current efficiency is 99.27%.

KeywordActive Voltage Positioning (Avp) Dual Loop Fast Response Low-dropout (Ldo) Regulator Pulsewidth Modulation (Pwm) Control Switching Ldo Regulator.
DOI10.1109/JSSC.2021.3129620
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000732322600001
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141
Scopus ID2-s2.0-85121385528
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Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
INSTITUTE OF MICROELECTRONICS
Corresponding AuthorLu, Yan
Affiliation1.State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau.
2.Univ Macau, FST DECE, Macau, Peoples R China
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Mao, Xiangyu,Lu, Yan,Martins, Rui P.. A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors[J]. IEEE Journal of Solid-State Circuits, 2021, 57(6), 1841-1853.
APA Mao, Xiangyu., Lu, Yan., & Martins, Rui P. (2021). A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors. IEEE Journal of Solid-State Circuits, 57(6), 1841-1853.
MLA Mao, Xiangyu,et al."A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors".IEEE Journal of Solid-State Circuits 57.6(2021):1841-1853.
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