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A sub-0.25pJ/bit 47.6- to-58.8Gb/s reference-less single-loop PAM-4 bang-bang CDR with a deliberately-current- mismatch frequency acquisition technique in 28nm CMOS
Zhao, X.; Chen, Y.; Mak, P. I.; Martins, R. P.
2021-06-07
Source PublicationCircuit Techniques for High-Speed Transceiver Front-Ends
AbstractThis paper reports a reference-less single-loop bang-bang clock and data recovery (BBCDR) circuit featuring fast and robust frequency acquisition without identifying the frequency error polarity. The key idea is a deliberately-current-mismatch charge-pump pair, which avoids the need of a complex high-speed data path or clock path during frequency acquisition. Prototyped in 28nm CMOS, our BBCDR covers a 47.6-to-58.8Gb/s PAM-4 input automatically. The achieved energy efficiency (≤0.25pJ/bit) and acquisition speed [9.8(Gb/s)/μs] compare favorably with the prior art. Keywords—CMOS, reference less, single loop, half-rate, bang-bang clock and data recovery (BBCDR), frequency detector (FD), charge pump (CP), 4-level pulse amplitude modulation (PAM-4), zero (ZNC), positive (PNC), and negative (NNC) net current.
KeywordCDR CMOS Reference
URLView the original
Language英語English
The Source to ArticlePB_Publication
PUB ID59427
Document TypeConference paper
CollectionINSTITUTE OF MICROELECTRONICS
Corresponding AuthorChen, Y.
Recommended Citation
GB/T 7714
Zhao, X.,Chen, Y.,Mak, P. I.,et al. A sub-0.25pJ/bit 47.6- to-58.8Gb/s reference-less single-loop PAM-4 bang-bang CDR with a deliberately-current- mismatch frequency acquisition technique in 28nm CMOS[C], 2021.
APA Zhao, X.., Chen, Y.., Mak, P. I.., & Martins, R. P. (2021). A sub-0.25pJ/bit 47.6- to-58.8Gb/s reference-less single-loop PAM-4 bang-bang CDR with a deliberately-current- mismatch frequency acquisition technique in 28nm CMOS. Circuit Techniques for High-Speed Transceiver Front-Ends.
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