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A 10-bit 100-MS/s Reference-Free SAR ADC in 90nm CMOS
Zhu, Y.; Chan, C.H.; Chio, U.F.; Sin, S. W.; U, S.P.; Martins, R. P.; Maloberti, F.
2010-06-01
Source PublicationIEEE Journal of Solid-State Circuits
ISSN0018-9200
Pages1111-1121
Abstract

A 1.2 V 10-bit 100MS/s Successive Approximation (SA) ADC is presented. The scheme achieves high-speed and low-power operation thanks to the reference-free technique that avoids the static power dissipation of an on-chip reference generator. Moreover, the use of a common-mode based charge recovery switching method reduces the switching energy and improves the conversion linearity. A variable self-timed loop optimizes reset time for the preamplifier to improve the conversion speed. Measurement results on a 90nm CMOS prototype operated at 1.2V supply show 3mW total power consumption with a peak SNDR of 56.6dB and a FOM of 77fJ/conv-step.

KeywordAnalog-to-digital Converter Adc Sar Charge-recovery Switched Technique
URLView the original
Language英語English
The Source to ArticlePB_Publication
Document TypeJournal article
CollectionUniversity of Macau
Recommended Citation
GB/T 7714
Zhu, Y.,Chan, C.H.,Chio, U.F.,et al. A 10-bit 100-MS/s Reference-Free SAR ADC in 90nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2010, 1111-1121.
APA Zhu, Y.., Chan, C.H.., Chio, U.F.., Sin, S. W.., U, S.P.., Martins, R. P.., & Maloberti, F. (2010). A 10-bit 100-MS/s Reference-Free SAR ADC in 90nm CMOS. IEEE Journal of Solid-State Circuits, 1111-1121.
MLA Zhu, Y.,et al."A 10-bit 100-MS/s Reference-Free SAR ADC in 90nm CMOS".IEEE Journal of Solid-State Circuits (2010):1111-1121.
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