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A 50fJ 10b 160 MS/s Pipelined-SAR ADC with Decoupled Flip-Around MDAC and Self-Embedded Offset Cancellation
Zhu, Y.; Chan, C.H.; Sin, S. W.; U, S.P.; Martins, R. P.; Maloberti, F.
2012-11-01
Source PublicationIEEE Journal of Solid-State Circuits (SCI, IF=3.22)
ISSN0018-9200
Pages2614-2626
Abstract

This paper presents a Time-Interleaved pipelined-SAR ADC with on-chip offset cancellation technique. The design reuses the SAR ADC to perform offset cancellation, thus saving calibration costs. The inter-stage gain of 8 is implemented in a 6-bit capacitive DAC with a flip around operation. A capacitive attenuation used in both the 1st-and 2nd-DACs significantly reduces the power dissipation and optimizes conversion speed. The detailed circuit implementation of the sub-threshold op-amp is discussed, and the possible limits caused by non-idealities are analyzed for a proper correction in the design. These include the inter-stage-gain error and various channel mismatches of offset, gain, and timing. Measurements of a 65nm CMOS prototype operating at 160MS/s and 1.1V supply show an SNDR of 55.4dB and 2.72mW total power consumption

KeywordAnalog-to-digital Converter Adc Pipelined-sar Offset-cancellation Decoupled Flip-around Mdac Vdd-attenuator
Language英語English
The Source to ArticlePB_Publication
PUB ID8398
Document TypeJournal article
CollectionDEPARTMENT OF ELECTROMECHANICAL ENGINEERING
Recommended Citation
GB/T 7714
Zhu, Y.,Chan, C.H.,Sin, S. W.,et al. A 50fJ 10b 160 MS/s Pipelined-SAR ADC with Decoupled Flip-Around MDAC and Self-Embedded Offset Cancellation[J]. IEEE Journal of Solid-State Circuits (SCI, IF=3.22), 2012, 2614-2626.
APA Zhu, Y.., Chan, C.H.., Sin, S. W.., U, S.P.., Martins, R. P.., & Maloberti, F. (2012). A 50fJ 10b 160 MS/s Pipelined-SAR ADC with Decoupled Flip-Around MDAC and Self-Embedded Offset Cancellation. IEEE Journal of Solid-State Circuits (SCI, IF=3.22), 2614-2626.
MLA Zhu, Y.,et al."A 50fJ 10b 160 MS/s Pipelined-SAR ADC with Decoupled Flip-Around MDAC and Self-Embedded Offset Cancellation".IEEE Journal of Solid-State Circuits (SCI, IF=3.22) (2012):2614-2626.
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