Electroless deposition of NiP film on p-Si(100) and its property study

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	Electroless deposition of NiP film on p-Si(100) and its property study
	Tong H.1; Wang C.2; Li H.1
	2007-06-01
Source Publication	Nanjing Hangkong Hangtian Daxue Xuebao/Journal of Nanjing University of Aeronautics and Astronautics
ISSN	10052615
Volume	39 Issue:3 Pages:343-348
Abstract	The NiP films are electrolessly plated on the p-Si(100) surface in the bath of NiSO·6HO+ NaHPO·HO+Na CHO·HO at the temperature of (90±2)°C based on the palladium as catalytic seed layer. The seed layer is deposited on the silicon surface by introducing silicon wafer in solution of SnSO, firstly and then in PdCl in consequence. The composition of the films is characterized by energy dispersive X ray analysis (EDX), the morphology and the surface coverage of the NiP film are investigated by atomic force microcopy (AFM) and anodic stripping sweep votammetry (ASV). The result show that the silicon surface is just fully covered by uniform and even NiP particles with the surface coverage (Γ) reaching 4.03 × 10 mol/cm. The cathodic polarization curves for hydrogen evolution under illumination and in dark are detected in 0.5 mol·L HSO solution with the working electrode of NiP/Si at different deposition time. The result show that NiP/Si electrode has the most efficient photo-catalytic hydrogen evolution activity when the silicon surface is properly covered by NiP film.
Keyword	Electroless NiP films p-Si Photocatalytic activity Property study
URL	View the original
Language	英語English
Fulltext Access	View Full-Text via Scopus
Document Type	Journal article
Collection	University of Macau
Affiliation	1.Nanjing University of Aeronautics and Astronautics 2.Lanzhou University
Recommended Citation GB/T 7714	Tong H.,Wang C.,Li H.. Electroless deposition of NiP film on p-Si(100) and its property study[J]. Nanjing Hangkong Hangtian Daxue Xuebao/Journal of Nanjing University of Aeronautics and Astronautics, 2007, 39(3), 343-348.
APA	Tong H.., Wang C.., & Li H. (2007). Electroless deposition of NiP film on p-Si(100) and its property study. Nanjing Hangkong Hangtian Daxue Xuebao/Journal of Nanjing University of Aeronautics and Astronautics, 39(3), 343-348.
MLA	Tong H.,et al."Electroless deposition of NiP film on p-Si(100) and its property study".Nanjing Hangkong Hangtian Daxue Xuebao/Journal of Nanjing University of Aeronautics and Astronautics 39.3(2007):343-348.

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