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A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS
Yi, Haidong1,2; Yu, Wei-Han1,2; Mak, Pui-In1,2; Yin, Jun1,2; Martins, Rui P.1,2
2018-06
Source PublicationIEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN0018-9200
Volume53Issue:6Pages:1618-1627
Abstract

This paper describes an ultra-low-voltage Bluetooth low-energy (BLE) receiver (RX) front end with an on-chip micropower manager (mu PM) to customize the internal voltage domains. It aims at direct powering by the sub-0.5-V energy-harvesting sources like the on-body thermoelectric, eliminating the loss and cost of the interim dc-dc converters. Specifically, the RX incorporates: 1) a two-stage power-gating low-noise amplifier with fully on-chip input-impedance matching and passive gain boosting reducing both the active and sleep power; 2) a class-D voltage-controlled oscillator (VCO) in parallel with a class-C starter to secure a fast startup; and 3) a mu PM using ring-VCO-locked charge pumps and bandgap references to withstand the supply-voltage variation (0.18-0.3 V). Fabricated in 28-nm CMOS, the RX operates down to a 0.18-V supply, while exhibiting 11.3-dB NF and -12.5-dBm out-of-band IIP3. The VCO shows < -113 dBc/Hz phase noise at 2.5-MHz offset. The active and sleep power are 382 mu W and 1.33 nW, respectively.

KeywordBandgap Reference (Bgr) Bluetooth Low Energy (Ble) Charge Pump (Cp) Class-d Voltage-controlled Oscillator (Vco) Cmos Energy Harvesting Low-noise Amplifier (Lna) Micropower Manager (Mu Pm) Power-gating Receiver (Rx) Ultra-low Power (Ulp) Ultra-low Voltage (Ulv)
DOI10.1109/JSSC.2018.2815987
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000433336200005
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
The Source to ArticleWOS
Scopus ID2-s2.0-85045199738
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Corresponding AuthorMak, Pui-In; Martins, Rui P.
Affiliation1.Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau 999078, Peoples R China
2.Univ Macau, Fac Sci & Technol, Dept Elect & Comp Engn, Macau 999078, Peoples R China
First Author AffilicationUniversity of Macau
Corresponding Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Yi, Haidong,Yu, Wei-Han,Mak, Pui-In,et al. A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53(6), 1618-1627.
APA Yi, Haidong., Yu, Wei-Han., Mak, Pui-In., Yin, Jun., & Martins, Rui P. (2018). A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 53(6), 1618-1627.
MLA Yi, Haidong,et al."A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS".IEEE JOURNAL OF SOLID-STATE CIRCUITS 53.6(2018):1618-1627.
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