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Status | 已發表Published |
A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS | |
Yi, Haidong1,2; Yu, Wei-Han1,2; Mak, Pui-In1,2; Yin, Jun1,2; Martins, Rui P.1,2 | |
2018-06 | |
Source Publication | IEEE JOURNAL OF SOLID-STATE CIRCUITS |
ISSN | 0018-9200 |
Volume | 53Issue:6Pages:1618-1627 |
Abstract | This paper describes an ultra-low-voltage Bluetooth low-energy (BLE) receiver (RX) front end with an on-chip micropower manager (mu PM) to customize the internal voltage domains. It aims at direct powering by the sub-0.5-V energy-harvesting sources like the on-body thermoelectric, eliminating the loss and cost of the interim dc-dc converters. Specifically, the RX incorporates: 1) a two-stage power-gating low-noise amplifier with fully on-chip input-impedance matching and passive gain boosting reducing both the active and sleep power; 2) a class-D voltage-controlled oscillator (VCO) in parallel with a class-C starter to secure a fast startup; and 3) a mu PM using ring-VCO-locked charge pumps and bandgap references to withstand the supply-voltage variation (0.18-0.3 V). Fabricated in 28-nm CMOS, the RX operates down to a 0.18-V supply, while exhibiting 11.3-dB NF and -12.5-dBm out-of-band IIP3. The VCO shows < -113 dBc/Hz phase noise at 2.5-MHz offset. The active and sleep power are 382 mu W and 1.33 nW, respectively. |
Keyword | Bandgap Reference (Bgr) Bluetooth Low Energy (Ble) Charge Pump (Cp) Class-d Voltage-controlled Oscillator (Vco) Cmos Energy Harvesting Low-noise Amplifier (Lna) Micropower Manager (Mu Pm) Power-gating Receiver (Rx) Ultra-low Power (Ulp) Ultra-low Voltage (Ulv) |
DOI | 10.1109/JSSC.2018.2815987 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000433336200005 |
Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
The Source to Article | WOS |
Scopus ID | 2-s2.0-85045199738 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF MICROELECTRONICS |
Corresponding Author | Mak, Pui-In; Martins, Rui P. |
Affiliation | 1.Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau 999078, Peoples R China 2.Univ Macau, Fac Sci & Technol, Dept Elect & Comp Engn, Macau 999078, Peoples R China |
First Author Affilication | University of Macau |
Corresponding Author Affilication | University of Macau |
Recommended Citation GB/T 7714 | Yi, Haidong,Yu, Wei-Han,Mak, Pui-In,et al. A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53(6), 1618-1627. |
APA | Yi, Haidong., Yu, Wei-Han., Mak, Pui-In., Yin, Jun., & Martins, Rui P. (2018). A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 53(6), 1618-1627. |
MLA | Yi, Haidong,et al."A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS".IEEE JOURNAL OF SOLID-STATE CIRCUITS 53.6(2018):1618-1627. |
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