Residential College | false |
Status | 已發表Published |
A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array | |
Dong, Li1; Song, Yan2; Xie, Yi1; Xin, Youze1; Li, Ken1; Jing, Xixin1; Zhang, Bing1; Gui, Xiaoyan1; Geng, Li1 | |
2021-05-16 | |
Source Publication | Microelectronics Journal |
ISSN | 0026-2692 |
Volume | 113Pages:105109 |
Abstract | This paper presents an effective method to arrange high linearity and area-efficient digital-to-analog converter (DAC) to enhance the resolution of successive approximation register (SAR) analog-to-digital converter (ADC). The relationship between ENOB and DAC mismatch error is theoretically analyzed, which gives the guidance of optimizing the mismatch error of DAC array. The parasitic effect on the linearity of DAC can be obtained through a normalized parasitic capacitor model, which evaluates the parasitic capacitors caused by the layout and routing of DAC array. A 10-bit 20 MS/s SAR ADC with redundancy is fabricated with 0.18 μm CMOS process. Measurement results show that the signal-to-noise and distortion ratio (SNDR) and the spurious-free dynamic range (SFDR) are 57.9 dB and 75.9 dB, respectively. The SAR ADC achieves a Walden FoM (FoM) of 75.1 fJ/conversion step and occupies a small active area of 0.069 mm benefited from the compact layout. |
Keyword | Analog-to-digital Converter (Adc) Area-efficient Dac Mismatch High Linearity Insensitive Geometry |
DOI | 10.1016/j.mejo.2021.105109 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering ; Science & Technology - Other Topics |
WOS Subject | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
WOS ID | WOS:000660447100008 |
Publisher | Elsevier Ltd |
Scopus ID | 2-s2.0-85106492440 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING Faculty of Science and Technology THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) |
Corresponding Author | Zhang, Bing; Geng, Li |
Affiliation | 1.School of Microelectronics, Xi'an Jiaotong University, Xi'an, 710049, China 2.State Key Laboratory of Analog and Mixed Signal VLSI, DECE/FST, University of Macau, Macau, 999078, China |
Recommended Citation GB/T 7714 | Dong, Li,Song, Yan,Xie, Yi,et al. A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array[J]. Microelectronics Journal, 2021, 113, 105109. |
APA | Dong, Li., Song, Yan., Xie, Yi., Xin, Youze., Li, Ken., Jing, Xixin., Zhang, Bing., Gui, Xiaoyan., & Geng, Li (2021). A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array. Microelectronics Journal, 113, 105109. |
MLA | Dong, Li,et al."A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array".Microelectronics Journal 113(2021):105109. |
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