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Status | 已發表Published |
A 5-bit 1.25-GS/s 4x-capacitive-folding flash ADC in 65-nm CMOS | |
Chi-Hang Chan1; Yan Zhu1; Sai-Weng Sin1; Seng-Pan U1,2; Rui Paulo Martins1,3; Franco Maloberti1,4 | |
2013-09 | |
Source Publication | IEEE Journal of Solid-State Circuits |
ISSN | 0018-9200 |
Volume | 48Issue:9Pages:2154-2169 |
Abstract | This paper presents a 5-bit 1.25-GS/s folding flash ADC. The prototype achieves a folding factor of four with a capacitive folding technique that only consumes dynamic power. Incorporated with various calibration schemes, folding errors and the comparator's threshold inaccuracies are corrected, thus allowing a low input capacitance of 80 fF. The design is fabricated using 65-nm digital CMOS technology and occupies 0.007 mm2. The maximum DNL and INL post calibration are 0.67 and 0.47 LSB, respectively. Measurement results show that the ADC can achieve 1.25 GS/s at 1-V supply with a total power consumption of 595 μW. In addition, it exhibits a mean ENOB of 4.8b at dc among ten chips, which yields an FoM of 17 fJ/conversion-step. © 1966-2012 IEEE. |
Keyword | Analog-to-digital Conversion (Adc) Calibration Embedded Reference Flash Adc Folding Low Power |
DOI | 10.1109/JSSC.2013.2264617 |
URL | View the original |
Indexed By | SCIE ; CPCI-S |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000323651000017 |
Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 |
The Source to Article | Scopus |
Scopus ID | 2-s2.0-84883280222 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF MICROELECTRONICS Faculty of Science and Technology DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING |
Corresponding Author | Chi-Hang Chan |
Affiliation | 1.State-Key Laboratory of Analog and Mixed Signal VLSI, Faculty of Science and Technology, University of Macau, Macao, China 2.the Synopsys-Chipidea Microelectronics (Macau) Limited 3.on leave from Instituto Superior Técnico/Technical University of Lisbon, 1049-001 Lisbon, Portugal 4.Department of Electronics, University of Pavia, 27100 Pavia, Italy |
First Author Affilication | Faculty of Science and Technology |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Chi-Hang Chan,Yan Zhu,Sai-Weng Sin,et al. A 5-bit 1.25-GS/s 4x-capacitive-folding flash ADC in 65-nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2013, 48(9), 2154-2169. |
APA | Chi-Hang Chan., Yan Zhu., Sai-Weng Sin., Seng-Pan U., Rui Paulo Martins., & Franco Maloberti (2013). A 5-bit 1.25-GS/s 4x-capacitive-folding flash ADC in 65-nm CMOS. IEEE Journal of Solid-State Circuits, 48(9), 2154-2169. |
MLA | Chi-Hang Chan,et al."A 5-bit 1.25-GS/s 4x-capacitive-folding flash ADC in 65-nm CMOS".IEEE Journal of Solid-State Circuits 48.9(2013):2154-2169. |
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