A 120-150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psatfor Sub-THz Imaging System

doi:10.1109/ACCESS.2021.3080710

UM > THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)

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	A 120-150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psatfor Sub-THz Imaging System
	Zhang, Jincheng 1; Wu, Tianxiang 1; Nie, Lihe 1; Ma, Shunli 1; Chen, Yong2,3 ; Ren, Junyan 1
	2021-05-17
Source Publication	IEEE Access
ISSN	2169-3536
Volume	9 Pages:74752-74762
Abstract	This paper presents a high-gain D-band power amplifier (PA) fabricated with 28-nm CMOS technology for a sub-terahertz frequency modulated continuous wave imaging system. It adopts two-channel power combining using artificial transmission lines to absorb the parasitic capacitance of the ground-signal-ground pad. The layout of the transistors and neutralization capacitors are optimized to improve the maximum stable gain, stability, and robustness. Asymmetrically magnetically coupled resonators are used in inter-stage and input matching networks to extend the operating bandwidth. The PA achieves a peak power gain of 21.9 dB and maximum output power of 11.8 dBm with 10.7% of power-added efficiency. Also, this PA can achieve higher than 10 dBm output power over the frequency range of 120-150 GHz.
Keyword	Cmos D-band Frequency Modulated Continuous Wave (Fmcw) Imaging System Power Amplifier (Pa) Power Combining Sub-terahertz (Sub-thz)
DOI	10.1109/ACCESS.2021.3080710
URL	View the original
Indexed By	SCIE
Language	英語English
WOS Research Area	Computer Science ; Engineering ; Telecommunications
WOS Subject	Computer Science, Information Systems ; Engineering, Electrical & Electronic ; Telecommunications
WOS ID	WOS:000673605300001
Scopus ID	2-s2.0-85107030025
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) INSTITUTE OF MICROELECTRONICS DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding Author	Ma, Shunli; Ren, Junyan
Affiliation	1.State Key Laboratory of ASIC and System, Fudan University, Shanghai, China 2.State-Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macao 3.Department of Electrical and Computer Engineering, Faculty of Science and Technology, University of Macau, 999078, Macao
Recommended Citation GB/T 7714	Zhang, Jincheng,Wu, Tianxiang,Nie, Lihe,et al. A 120-150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psatfor Sub-THz Imaging System[J]. IEEE Access, 2021, 9, 74752-74762.
APA	Zhang, Jincheng., Wu, Tianxiang., Nie, Lihe., Ma, Shunli., Chen, Yong., & Ren, Junyan (2021). A 120-150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psatfor Sub-THz Imaging System. IEEE Access, 9, 74752-74762.
MLA	Zhang, Jincheng,et al."A 120-150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psatfor Sub-THz Imaging System".IEEE Access 9(2021):74752-74762.

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