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A 0.0285-mm² 0.68-pJ/bit Single-Loop Full-Rate Bang-Bang CDR Without Reference and Separate FD Pulling Off an 8.2-Gb/s/μs Acquisition Speed of the PAM-4 Input in 28-nm CMOS
Zhao, Xiaoteng1,2; Chen, Yong1,2; Mak, Pui In1,2; Martins, Rui P.1,2,3
2021-09-29
Source PublicationIEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN0018-9200
Volume57Issue:2Pages:546-561
Abstract

This article reports a single-loop full-rate bang-bang clock and data recovery (BBCDR) circuit supporting a four-level pulse amplitude modulation (PAM-4) pattern. We eliminate both the reference and the separate frequency detector (FD) by deliberately adding two fixed strobe points in the bang-bang phase detector (BBPD) curve via a clock-selection scheme. As such, we can achieve a wide frequency-capture range in a single-sided FD polarity. The BBPD also incorporates a hybrid control circuit to automate the frequency acquisition over a wide frequency range. Prototyped in a 28-nm CMOS, the proposed BBCDR occupies a tiny area of 0.0285 mm² and exhibits a 23-to-29-Gb/s capture range. The acquisition speed [8.2 Gb/s/μs] and energy efficiency (0.68 pJ/bit) compare favorably with the state of the art.

KeywordAcquisition Speed Bang-bang Clock And Data Recovery (Bbcdr) Charge Pump (Cp) Clocks Cmos Detectors Four-level Pulse Amplitude Modulation (Pam-4) Frequency Detector (Fd) Frequency Modulation Hybrid Control Circuit (Hcc) Jitter Jitter Tolerance (Jtol) Jitter Transfer Function (Jtf) Logic Gates Phase Detector (Pd) Strobe Point (Sp). Switches Voltage-controlled Oscillators
DOI10.1109/JSSC.2021.3113773
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000732926900001
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC445 HOES LANE, PISCATAWAY, NJ 08855-4141
Scopus ID2-s2.0-85116854849
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionTHE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
Faculty of Science and Technology
INSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorChen, Yong
Affiliation1.University of Macau, State Key Laboratory of Analog and Mixed-Signal VLSI, 999078, Macao
2.Institute of Microelectronic (IME), University of Macau, Department of Electrical and Computer Engineering (DECE), Faculty of Science and Technology, 999078, Macao
3.Instituto Superior Tcnico, Universidade de Lisboa, Lisbon, 1049-001, Portugal
First Author AffilicationUniversity of Macau;  Faculty of Science and Technology
Corresponding Author AffilicationUniversity of Macau;  Faculty of Science and Technology
Recommended Citation
GB/T 7714
Zhao, Xiaoteng,Chen, Yong,Mak, Pui In,et al. A 0.0285-mm² 0.68-pJ/bit Single-Loop Full-Rate Bang-Bang CDR Without Reference and Separate FD Pulling Off an 8.2-Gb/s/μs Acquisition Speed of the PAM-4 Input in 28-nm CMOS[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 57(2), 546-561.
APA Zhao, Xiaoteng., Chen, Yong., Mak, Pui In., & Martins, Rui P. (2021). A 0.0285-mm² 0.68-pJ/bit Single-Loop Full-Rate Bang-Bang CDR Without Reference and Separate FD Pulling Off an 8.2-Gb/s/μs Acquisition Speed of the PAM-4 Input in 28-nm CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 57(2), 546-561.
MLA Zhao, Xiaoteng,et al."A 0.0285-mm² 0.68-pJ/bit Single-Loop Full-Rate Bang-Bang CDR Without Reference and Separate FD Pulling Off an 8.2-Gb/s/μs Acquisition Speed of the PAM-4 Input in 28-nm CMOS".IEEE JOURNAL OF SOLID-STATE CIRCUITS 57.2(2021):546-561.
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