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Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition
Rashid, Rashad1,2; Ling, Francis Chi Chung1; Wang, Shuang Peng3; Xiao, Ke1; Cui, Xiaodong1; Chan, T. H.4; Ong, H. C.4; Azeem, Waqar1; Younas, Muhammad5
2020-10-15
Source PublicationNanoscale
ISSN2040-3364
Volume12Issue:39Pages:20189-20201
Abstract

For potential applications in ferroelectric switching and piezoelectric nano-generator devices, the promising ferroelectric properties of two dimensional (2D) layered In2Se3 attracted much attention. In the present study, 2D In2Se3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. The optical microscopy study revealed that the flake changed from a circular shape to a sharp face triangle as the Ar flow rate and growth time increased. Raman spectroscopy and high-resolution scanning transmission electron microscopy (HR-STEM) studies revealed that the flakes were of α and β phases, each of which has a hexagonal crystal structure. Strong second harmonic generation (SHG) was observed from α-In2Se3, demonstrating its non-centrosymmetric structure. The piezo-force microscopic (PFM) study showed the presence of out of plane (OOP) ferroelectricity with no in plane (IP) ferroelectricity in CVD grown α-In2Se3 indicating its vertically confined piezoresponse, which was tuned by the applied electric bias and the flake thickness. The present result of shape-controlled growth of In2Se3 with OOP ferroelectricity would open new pathways in the field of 2D ferroelectric switching devices.

DOI10.1039/c9nr10207h
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000579877200049
PublisherROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Scopus ID2-s2.0-85093538393
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorRashid, Rashad
Affiliation1.Department of Physics, The University of Hong Kong, Pokfulam Road, China. E-mail: [email protected]
2.National Institute of Lasers and Optronics (NILOP), Islamabad, Pakistan
3.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao S.A.R., 999078, China
4.Department of Physics, The Chinese University of Hong Kong, Sha Tin, Hong Kong
5.PCG, Physics Division, PINSTECH, P.O. Nilore, Islamabad 45650, Pakistan
Recommended Citation
GB/T 7714
Rashid, Rashad,Ling, Francis Chi Chung,Wang, Shuang Peng,et al. Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition[J]. Nanoscale, 2020, 12(39), 20189-20201.
APA Rashid, Rashad., Ling, Francis Chi Chung., Wang, Shuang Peng., Xiao, Ke., Cui, Xiaodong., Chan, T. H.., Ong, H. C.., Azeem, Waqar., & Younas, Muhammad (2020). Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition. Nanoscale, 12(39), 20189-20201.
MLA Rashid, Rashad,et al."Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition".Nanoscale 12.39(2020):20189-20201.
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