Residential College | false |
Status | 已發表Published |
Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes | |
Dong, Jia Yi1; Ji, Wen Yu2; Wang, Shuang Peng1; Yuan, Qi Lin1,2; Kong, You Chao1; Su, Shi Chen3; Ng, Kar Wei1; Tang, Zi Kang1 | |
2020-03-17 | |
Source Publication | ACS Applied Electronic Materials |
ISSN | 2637-6113 |
Volume | 2Issue:4Pages:1074-1080 |
Abstract | Solution-processed ZnO nanoparticle thin films are widely used as the electron transport layers (ETLs) in quantum dot light-emitting diodes (QLEDs). While the ZnO nanoparticle (NP) synthesis process has been thoroughly optimized, very few studies have focused on exploring how the solvents for dispersing the NPs affect the film-forming process, which has profound effects on the film quality and functionality as ETLs. Herein, we present a comprehensive investigation on the impact of the dispersing agent on the materials and carrier transport properties of spin-coated ZnO NP thin films. The first four members of the alkanol family, which show considerably different viscosities and volatilities, were used in this study. ZnO NP thin films deposited with different alcohols were used as the ETLs of the QLED structure, and the optoelectronic performances of the devices are compared. Alcohols with high viscosity are found to cause NP agglomerations, which roughen the film surface and lead to significant leakage current. Nanocracks in the ZnO NP film are observed when a highly volatile solvent is used due to the vigorous bursts of vapor during solvent evaporation. Our results show that a proper solvent can improve the surface roughness and compactness of the solution-processed ZnO films and lead to a 30% difference in the current efficiency of QLEDs. The findings here clearly indicate the important roles of the dispersing agent in the formation of high-quality NP-based thin films, which can be an important guidance for achieving high performances in QLEDs as well as a variety of solution-based devices. |
Keyword | Electron Transport Layer Interface Qleds Solvent Zno |
DOI | 10.1021/acsaelm.0c00091 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering ; Materials Science |
WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary |
WOS ID | WOS:000529879600026 |
Scopus ID | 2-s2.0-85103861053 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Wang, Shuang Peng; Ng, Kar Wei; Tang, Zi Kang |
Affiliation | 1.Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Avenida da Universidade, 999078, Macao 2.Department of Physics, Jilin University, Changchun, 130023, China 3.Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou, 510631, China |
First Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Recommended Citation GB/T 7714 | Dong, Jia Yi,Ji, Wen Yu,Wang, Shuang Peng,et al. Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes[J]. ACS Applied Electronic Materials, 2020, 2(4), 1074-1080. |
APA | Dong, Jia Yi., Ji, Wen Yu., Wang, Shuang Peng., Yuan, Qi Lin., Kong, You Chao., Su, Shi Chen., Ng, Kar Wei., & Tang, Zi Kang (2020). Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes. ACS Applied Electronic Materials, 2(4), 1074-1080. |
MLA | Dong, Jia Yi,et al."Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes".ACS Applied Electronic Materials 2.4(2020):1074-1080. |
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