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Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes
Dong, Jia Yi1; Ji, Wen Yu2; Wang, Shuang Peng1; Yuan, Qi Lin1,2; Kong, You Chao1; Su, Shi Chen3; Ng, Kar Wei1; Tang, Zi Kang1
2020-03-17
Source PublicationACS Applied Electronic Materials
ISSN2637-6113
Volume2Issue:4Pages:1074-1080
Abstract

Solution-processed ZnO nanoparticle thin films are widely used as the electron transport layers (ETLs) in quantum dot light-emitting diodes (QLEDs). While the ZnO nanoparticle (NP) synthesis process has been thoroughly optimized, very few studies have focused on exploring how the solvents for dispersing the NPs affect the film-forming process, which has profound effects on the film quality and functionality as ETLs. Herein, we present a comprehensive investigation on the impact of the dispersing agent on the materials and carrier transport properties of spin-coated ZnO NP thin films. The first four members of the alkanol family, which show considerably different viscosities and volatilities, were used in this study. ZnO NP thin films deposited with different alcohols were used as the ETLs of the QLED structure, and the optoelectronic performances of the devices are compared. Alcohols with high viscosity are found to cause NP agglomerations, which roughen the film surface and lead to significant leakage current. Nanocracks in the ZnO NP film are observed when a highly volatile solvent is used due to the vigorous bursts of vapor during solvent evaporation. Our results show that a proper solvent can improve the surface roughness and compactness of the solution-processed ZnO films and lead to a 30% difference in the current efficiency of QLEDs. The findings here clearly indicate the important roles of the dispersing agent in the formation of high-quality NP-based thin films, which can be an important guidance for achieving high performances in QLEDs as well as a variety of solution-based devices.

KeywordElectron Transport Layer Interface Qleds Solvent Zno
DOI10.1021/acsaelm.0c00091
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering ; Materials Science
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary
WOS IDWOS:000529879600026
Scopus ID2-s2.0-85103861053
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorWang, Shuang Peng; Ng, Kar Wei; Tang, Zi Kang
Affiliation1.Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Avenida da Universidade, 999078, Macao
2.Department of Physics, Jilin University, Changchun, 130023, China
3.Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou, 510631, China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Dong, Jia Yi,Ji, Wen Yu,Wang, Shuang Peng,et al. Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes[J]. ACS Applied Electronic Materials, 2020, 2(4), 1074-1080.
APA Dong, Jia Yi., Ji, Wen Yu., Wang, Shuang Peng., Yuan, Qi Lin., Kong, You Chao., Su, Shi Chen., Ng, Kar Wei., & Tang, Zi Kang (2020). Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes. ACS Applied Electronic Materials, 2(4), 1074-1080.
MLA Dong, Jia Yi,et al."Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light-Emitting Diodes".ACS Applied Electronic Materials 2.4(2020):1074-1080.
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