Residential College | false |
Status | 已發表Published |
Ultrasensitive Organic-Modulated CsPbBr3 Quantum Dot Photodetectors via Fast Interfacial Charge Transfer | |
Li,Jingzhou1,2; Xia,Junmin3; Liu,Yuan2; Zhang,Siwei1,2; Teng,Changjiu1,2; Zhang,Xuan1,2; Liu,Bilu1,2; Zhao,Shichao2; Zhao,Shixi4; Li,Baohua2; Xing,Guichuan3; Kang,Feiyu1,2; Wei,Guodan1,2 | |
2020-01 | |
Source Publication | Advanced Materials Interfaces |
ISSN | 2196-7350 |
Volume | 7Issue:2Pages:1901741 |
Abstract | The integration of organic materials with colloidal quantum dots (QDs) has the merits the advantages of the molecular diversity and photoelectric tunability for ultrasensitive photodetector applications. Herein, a uniform CsPbBr QD layer is sandwiched between the same poly-(N, N′-bis-4-butylphenyl-N, N′-bisphenyl) benzidine (Poly-TPD) and phenyl-C61-butyric acid methyl ester (PCBM) (1:1) organic blend films. The CsPbBr QD layer efficiently absorbs the excitation light, where the generated exciton can sufficiently diffuse to the interface of QD and organic blend layers for efficient charge separation and effective gate modulation. Owing to the desirable heterojunction at the interface, the dark current is substantially suppressed, while the photocurrent is increased in comparison with those of pristine QDs photodetectors. The ultrafast charge transfer time (≈300 ps) from QDs to organic blend layer measured by the time-resolved transient absorption spectroscopy is potentially benefit the enhanced electron–hole pair dissociation. The solution-processed, organic (Poly-TPD:PCBM blend)-modulated CsPbBr QDs photodetector are exhibited ultrasensitive photoresponse abilities in terms of in terms of noise equivalent power (NEP = 1 × 10 W Hz), I/I ratio (2 × 10), and the a specific detectivity (D* = 4.6 × 10 Jones). The results will be a starting point for ultrasensitive next-generation light detection technologies. |
Keyword | Detectivity Organic Materials Perovskite Quantum Dots Photodetectors Solution-processed |
DOI | 10.1002/admi.201901741 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Chemistry ; Materials Science |
WOS Subject | Chemistry, Multidisciplinary ; Materials Science, Multidisciplinary |
WOS ID | WOS:000502942700001 |
Publisher | WILEY, 111 RIVER ST, HOBOKEN 07030-5774, NJ USA |
Scopus ID | 2-s2.0-85076727037 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Wei,Guodan |
Affiliation | 1.Tsinghua-Berkeley Shenzhen Institute (TBSI),Tsinghua University,Shenzhen,518055,China 2.Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen,518055,China 3.Institute of Applied Physics and Materials Engineering,University of Macau,S.A.R. 999078,Macao 4.College of Materials and Environmental Engineering,Hangzhou Dianzi University,Hangzhou,310018,China |
Recommended Citation GB/T 7714 | Li,Jingzhou,Xia,Junmin,Liu,Yuan,et al. Ultrasensitive Organic-Modulated CsPbBr3 Quantum Dot Photodetectors via Fast Interfacial Charge Transfer[J]. Advanced Materials Interfaces, 2020, 7(2), 1901741. |
APA | Li,Jingzhou., Xia,Junmin., Liu,Yuan., Zhang,Siwei., Teng,Changjiu., Zhang,Xuan., Liu,Bilu., Zhao,Shichao., Zhao,Shixi., Li,Baohua., Xing,Guichuan., Kang,Feiyu., & Wei,Guodan (2020). Ultrasensitive Organic-Modulated CsPbBr3 Quantum Dot Photodetectors via Fast Interfacial Charge Transfer. Advanced Materials Interfaces, 7(2), 1901741. |
MLA | Li,Jingzhou,et al."Ultrasensitive Organic-Modulated CsPbBr3 Quantum Dot Photodetectors via Fast Interfacial Charge Transfer".Advanced Materials Interfaces 7.2(2020):1901741. |
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