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Carrier-potential interaction for high- T c superconductivity
Hui Pan1,2
2020-05-13
Source PublicationInternational Journal of Modern Physics B
ISSN0217-9792
Volume34Issue:18Pages:2050163
Abstract

The origin of high-temperature superconductivity has been widely debated since its discovery. Here, a model based on the interaction between carrier and local potential is proposed to reveal the mechanism. In this model, the potential that is analogous to the lattice point is composed of localized charges, whose vibration mediates the coupling of mobile carriers. A Hamiltonian that describes the vibration, coupling and various interactions among the ordered potentials and carriers is established. By analyzing the Hamiltonian, it is found that the vibration of local potential and the interactions, which are dependent on the carrier density, control the transition temperature. We show that the transition temperature is high if the local potential is composed of electrons and the mobile carrier is hole because of the strong coupling between them. By replacing the local potential with lattice point, the proposed model is equivalent to that in the BCS theory. Therefore, our model may provide a general theoretical description on the superconductivity.

KeywordCarrier-potential Interaction Hamiltonian High-temperature Superconductivity Ordered Potentials
DOI10.1142/S0217979220501635
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaPhysics
WOS SubjectPhysics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
WOS IDWOS:000557912300006
PublisherWORLD SCIENTIFIC PUBL CO PTE LTD, 5 TOH TUCK LINK, SINGAPORE 596224, SINGAPORE
Scopus ID2-s2.0-85085349689
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Citation statistics
Document TypeJournal article
CollectionFaculty of Science and Technology
INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
DEPARTMENT OF PHYSICS AND CHEMISTRY
Corresponding AuthorHui Pan
Affiliation1.Institute of Applied Physics and Materials Engineering,University of Macau,Macao
2.Department of Physics and Chemistry,Faculty of Science and Technology,University of Macau,Macao
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING;  Faculty of Science and Technology
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING;  Faculty of Science and Technology
Recommended Citation
GB/T 7714
Hui Pan. Carrier-potential interaction for high- T c superconductivity[J]. International Journal of Modern Physics B, 2020, 34(18), 2050163.
APA Hui Pan.(2020). Carrier-potential interaction for high- T c superconductivity. International Journal of Modern Physics B, 34(18), 2050163.
MLA Hui Pan."Carrier-potential interaction for high- T c superconductivity".International Journal of Modern Physics B 34.18(2020):2050163.
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