Residential College | false |
Status | 已發表Published |
Carrier-potential interaction for high- T c superconductivity | |
Hui Pan1,2 | |
2020-05-13 | |
Source Publication | International Journal of Modern Physics B |
ISSN | 0217-9792 |
Volume | 34Issue:18Pages:2050163 |
Abstract | The origin of high-temperature superconductivity has been widely debated since its discovery. Here, a model based on the interaction between carrier and local potential is proposed to reveal the mechanism. In this model, the potential that is analogous to the lattice point is composed of localized charges, whose vibration mediates the coupling of mobile carriers. A Hamiltonian that describes the vibration, coupling and various interactions among the ordered potentials and carriers is established. By analyzing the Hamiltonian, it is found that the vibration of local potential and the interactions, which are dependent on the carrier density, control the transition temperature. We show that the transition temperature is high if the local potential is composed of electrons and the mobile carrier is hole because of the strong coupling between them. By replacing the local potential with lattice point, the proposed model is equivalent to that in the BCS theory. Therefore, our model may provide a general theoretical description on the superconductivity. |
Keyword | Carrier-potential Interaction Hamiltonian High-temperature Superconductivity Ordered Potentials |
DOI | 10.1142/S0217979220501635 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Physics |
WOS Subject | Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical |
WOS ID | WOS:000557912300006 |
Publisher | WORLD SCIENTIFIC PUBL CO PTE LTD, 5 TOH TUCK LINK, SINGAPORE 596224, SINGAPORE |
Scopus ID | 2-s2.0-85085349689 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | Faculty of Science and Technology INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING DEPARTMENT OF PHYSICS AND CHEMISTRY |
Corresponding Author | Hui Pan |
Affiliation | 1.Institute of Applied Physics and Materials Engineering,University of Macau,Macao 2.Department of Physics and Chemistry,Faculty of Science and Technology,University of Macau,Macao |
First Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING; Faculty of Science and Technology |
Corresponding Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING; Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Hui Pan. Carrier-potential interaction for high- T c superconductivity[J]. International Journal of Modern Physics B, 2020, 34(18), 2050163. |
APA | Hui Pan.(2020). Carrier-potential interaction for high- T c superconductivity. International Journal of Modern Physics B, 34(18), 2050163. |
MLA | Hui Pan."Carrier-potential interaction for high- T c superconductivity".International Journal of Modern Physics B 34.18(2020):2050163. |
Files in This Item: | There are no files associated with this item. |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment