Residential College | false |
Status | 已發表Published |
A 0.4V 430nA quiescent current NMOS digital LDO with NAND-based analog-assisted loop in 28nm CMOS | |
Ma,Xiaofei1,2; Lu,Yan1; Martins,Rui P.1,3; Li,Qiang2 | |
2018-03-08 | |
Conference Name | 65th IEEE International Solid-State Circuits Conference (ISSCC) |
Source Publication | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
Volume | 61 |
Pages | 306-308 |
Conference Date | FEB 11-15, 2018 |
Conference Place | San Francisco, CA |
Abstract | Ultra-low-power fully-integrated voltage regulators with fast load-transient performance are highly attractive for low-power systems-on-a-chip (SoCs). In such systems, the digital units working in the subthreshold region are more sensitive to supply variations. The digital low-dropout regulator (DLDO) is more suitable for low-supply-voltage operation, as compared to an analog LDO regulator. But, traditional DLDOs are either slow or power hungry, and need a large output capacitor (consumes area) to survive a fast load transient. When a higher clock frequency is used for faster response, both the current efficiency and the loop stability are degraded [1]. An analog-assisted (AA) loop was used in [2] to provide a high-pass loop in parallel with the slow digital loop for fast response. However, a large coupling capacitor (100pF) was still needed, trading off area with power and speed. An NMOS power stage as a source follower is sometimes used in replica LDOs and cascaded LDOs [3] for its intrinsic response to load transient; the NMOS source follower naturally provides more output current when V drops. To improve upon the power-speed-area tradeoffs, this paper presents a DLDO using NMOS power switches, and employs a NAND-gate-based high-pass analog path (NAP) to assist the slow low-power digital loop. With these two techniques, nearly two orders of better FoM is achieved relative to the state-of-the-art. |
DOI | 10.1109/ISSCC.2018.8310306 |
URL | View the original |
Indexed By | CPCI-S |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000459205600125 |
Scopus ID | 2-s2.0-85046438636 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | INSTITUTE OF MICROELECTRONICS |
Affiliation | 1.University of Macau,Macao 2.University of Electronic Science and Technology of China,Chengdu,China 3.Instituto Superior Tecnico,University of Lisboa,Lisbon,Portugal |
First Author Affilication | University of Macau |
Recommended Citation GB/T 7714 | Ma,Xiaofei,Lu,Yan,Martins,Rui P.,et al. A 0.4V 430nA quiescent current NMOS digital LDO with NAND-based analog-assisted loop in 28nm CMOS[C], 2018, 306-308. |
APA | Ma,Xiaofei., Lu,Yan., Martins,Rui P.., & Li,Qiang (2018). A 0.4V 430nA quiescent current NMOS digital LDO with NAND-based analog-assisted loop in 28nm CMOS. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 61, 306-308. |
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