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Patent NumberCN102338669B
Status已授權 Granted
低电压低功耗CMOS温度传感器
Year Issued2014
2014-08-06
Application Number201110141653.8
Application Date2011-05-27
Rights Holder香港科技大学
罗文基; 阿明·贝尔马克; 梁锦和
Date Available2012-02-01
Country中國
Subtype发明专利 Invention
Abstract

本发明提供一种低电压低功耗CMOS温度传感器,作为基于工作在亚阈值区的串联的场效应晶体管设计的超低功耗嵌入式CMOS温度传感器,特别适用于无源RFID在食物检测中的应用。使用串联的工作在亚阈值区的场效应晶体管作为传感元件进一步减小所需工作电压,进而减小功耗,这对无源RFID应用来说非常重要。温度传感器是无源RFID标签的一部分,其包含温度传感器前端、PTAT和CTAT延迟发生器、时间数字差分输出电路。在优选实施例中,该传感器嵌入于无源超高频RFID标签,此标签采用传统0.18μm 1P6M CMOS工艺制备而成。传感器前端的工作电压在0.5V以内,其数字接口的工作电压在1V以内。该传感器在33次样本/秒时所测得的总功耗为119纳瓦,其校准后在-10℃至30℃之间可达到的精度为+1/-0.8℃。

Language中文Chinese
Open (Notice) NumberCN102338669A
IPC Classification NumberG01k7/01
CPC Classification NumberG06k19/0717 ; G01k7/01 ; G06k19/0723
Patent Agent陈源 ; 张天舒
Agency北京天昊联合知识产权代理有限公司
URLView the original
Document TypePatent
CollectionINSTITUTE OF MICROELECTRONICS
Affiliation澳門大學
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
罗文基,阿明·贝尔马克,梁锦和. 低电压低功耗CMOS温度传感器. CN102338669B[P]. 2014-08-06.
APA 罗文基., 阿明·贝尔马克., & 梁锦和 (2011-05-27). 低电压低功耗CMOS温度传感器.
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