| Status | 已發表Published |
| Low temperature MOCVD of oriented PbTiO3 films on Si(100) | |
| Chen H.; Yen B.M.; Bai G.R.; Liu D.; Chang H.L.M. | |
| 1994 | |
| Source Publication | Materials Research Society Symposium Proceedings
 |
| Volume | 335 |
| Pages | 35-40 |
| Abstract | Highly oriented PbTiO (PT) thin films have been successfully grown on Si(100) using MOCVD technique at as low as 450°C. Titanium isopropoxide, Ti(CHO), tetraethyl lead, Pb(CH), and pure oxygen were chosen as precursor materials in this work. The resulting film chemistry and texture were found to be strongly dependent on Pb/Ti source flow ratio and growth temperature. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of Illinois at Urbana-Champaign |
| Recommended Citation GB/T 7714 | Chen H.,Yen B.M.,Bai G.R.,et al. Low temperature MOCVD of oriented PbTiO3 films on Si(100)[C], 1994, 35-40. |
| APA | Chen H.., Yen B.M.., Bai G.R.., Liu D.., & Chang H.L.M. (1994). Low temperature MOCVD of oriented PbTiO3 films on Si(100). Materials Research Society Symposium Proceedings, 335, 35-40. |
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