High temperature x-ray diffraction study of PbTiO3 thin films grown on MgO(001) by MOCVD

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	High temperature x-ray diffraction study of PbTiO3 thin films grown on MgO(001) by MOCVD
	Batzer R.S.; Yen Biming; Liu Donhang; Kubo H.; Bai G.R.; Chen Haydn
	1996
Source Publication	Materials Research Society Symposium - Proceedings
Volume	415
Pages	207-212
Abstract	Lead titanate (PT) is ferroelectric in its tetragonal phase (c/a=1.06). The domain formation is coupled to the relaxation of internal stress generated by a combination of lattice mismatch, transformation strain and differential thermal stress. The mechanism of domain formation in an epitaxially grown PT film is related to the substrate type and the growth temperature. In this study, PT films have been deposited on MgO(001) in a cold-wall, horizontal metal organic chemical vapor deposition (MOCVD) system. The structure of domains and their evolution have been measured as a function of temperature by the x-ray diffraction method using a hot stage. Domain structure changes were observed by θ-2θ scans, ω scans, as well as in-plane φ scans. Effect of film stress on the ferroelectric transition temperature is discussed. Reproducibility of domain formation as a result of temperature cycling both below and above T is assessed.
URL	View the original
Language	英語English
Fulltext Access	View Full-Text via Scopus
Document Type	Conference paper
Collection	University of Macau
Affiliation	University of Illinois at Urbana-Champaign
Recommended Citation GB/T 7714	Batzer R.S.,Yen Biming,Liu Donhang,et al. High temperature x-ray diffraction study of PbTiO3 thin films grown on MgO(001) by MOCVD[C], 1996, 207-212.
APA	Batzer R.S.., Yen Biming., Liu Donhang., Kubo H.., Bai G.R.., & Chen Haydn (1996). High temperature x-ray diffraction study of PbTiO3 thin films grown on MgO(001) by MOCVD. Materials Research Society Symposium - Proceedings, 415, 207-212.

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