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Study of microstructure and gas sensing properties of tin oxide thin films prepared by metal organic chemical vapor deposition
Lee Sang Woo; Liu Donhang; Tsai Ping P.; Chen Haydn
1996
Source PublicationMaterials Research Society Symposium - Proceedings
Volume415
Pages237-242
AbstractTin oxide (SnO) thin films were deposited on polycrystalline alumina (AlO) substrates using metal organic chemical vapor deposition (MOCVD) technique at the growth temperature of 600 °C. X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were applied for the microstructure characterization of the films. The films were subjected to sensing tests under 1% H environment by monitoring changes in the electrical resistance of the films at elevated temperatures. There is a trend to exhibit sensor temperature characteristic in the deposited thin films which show a local maximum in the electrical resistance curve as a function of ambient temperature. The local maximum occurred at a relatively higher temperature than found in bulk sintered ceramics.
URLView the original
Language英語English
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Lee Sang Woo,Liu Donhang,Tsai Ping P.,et al. Study of microstructure and gas sensing properties of tin oxide thin films prepared by metal organic chemical vapor deposition[C], 1996, 237-242.
APA Lee Sang Woo., Liu Donhang., Tsai Ping P.., & Chen Haydn (1996). Study of microstructure and gas sensing properties of tin oxide thin films prepared by metal organic chemical vapor deposition. Materials Research Society Symposium - Proceedings, 415, 237-242.
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