| Residential College | false |
| Status | 已發表Published |
| Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD | |
| Liu D.; Chen H. | |
| 1996 | |
| Source Publication | Materials Letters
 |
| ISSN | 0167577X |
| Volume | 28Issue:1-3Pages:17-20 |
| Abstract | Single perovskite phase Pb(ScTa)O (PST) thin films have been grown using an one-stage MOCVD method. The processing temperature was 600°C. The film structure as a function of Pb/(Sc + Ta) flow ratio was determined using X-ray diffraction (XRD) and scanning electron microscopy (SEM). |
| Keyword | Ferroelectric Imaging Lead Scandium Tantalate Low Temperature Deposition Mocvd Perovskite Pyroelectric Silicon Substrates Thin Films |
| DOI | 10.1016/0167-577X(96)00029-8 |
| URL | View the original |
| Language | 英語English |
| WOS ID | WOS:A1996VJ82800004 |
| Scopus ID | 2-s2.0-0030243168 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Journal article |
| Collection | University of Macau |
| Affiliation | University of Illinois at Urbana-Champaign |
| Recommended Citation GB/T 7714 | Liu D.,Chen H.. Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD[J]. Materials Letters, 1996, 28(1-3), 17-20. |
| APA | Liu D.., & Chen H. (1996). Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD. Materials Letters, 28(1-3), 17-20. |
| MLA | Liu D.,et al."Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD".Materials Letters 28.1-3(1996):17-20. |
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