| Residential College | false |
| Status | 已發表Published |
| Low energy ion beam assisted deposition of TiN thin films on silicon | |
| Huang J.-H.2; Lin C.-H.2; Ma C.-H.2; Chen H.2 | |
| 2000-02-28 | |
| Source Publication | Scripta Materialia
 |
| ISSN | 13596462 |
| Volume | 42Issue:6Pages:573-579 |
| Abstract | TiN thin films were prepared by the ion beam assisted deposition (IBAD) method on Si (100) substrate with the ion energy below 300 Volts. The effect of process parameters, including, ion incident angle, ion energy, and deposition temperature, on the preferred orientation, resistivity and microstructure of the films was examined. The results suggest that the ion-induced defects are the major factor contributing to the change of resistivity of TiN. |
| DOI | 10.1016/S1359-6462(99)00393-0 |
| URL | View the original |
| Language | 英語English |
| WOS ID | WOS:000085943800010 |
| Scopus ID | 2-s2.0-0033885644 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Journal article |
| Collection | University of Macau |
| Affiliation | 1.National Tsing Hua University 2.University of Illinois at Urbana-Champaign |
| Recommended Citation GB/T 7714 | Huang J.-H.,Lin C.-H.,Ma C.-H.,et al. Low energy ion beam assisted deposition of TiN thin films on silicon[J]. Scripta Materialia, 2000, 42(6), 573-579. |
| APA | Huang J.-H.., Lin C.-H.., Ma C.-H.., & Chen H. (2000). Low energy ion beam assisted deposition of TiN thin films on silicon. Scripta Materialia, 42(6), 573-579. |
| MLA | Huang J.-H.,et al."Low energy ion beam assisted deposition of TiN thin films on silicon".Scripta Materialia 42.6(2000):573-579. |
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