Residential College | false |
Status | 已發表Published |
Effect of annealing on the dielectric properties of PZN-PT-BT ceramics | |
Wang X.1; Chen H.2 | |
2003-05-25 | |
Conference Name | 8th International-Union-of-Materials-Research-Societies Conference on Electronic Materials |
Source Publication | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 99 |
Issue | 1-3 |
Pages | 36-40 |
Conference Date | JUN 10-14, 2002 |
Conference Place | XIAN, PEOPLES R CHINA |
Abstract | The dielectric behaviors of Pb(ZnNb)O-PbTiO-BaTiO (PZN-PT-BT) ceramics of several compositions have been systematically studied in as-prepared (unannealed) condition as well as after annealing (at 880 °C for 16 h). The general trend seems to indicate that the annealed samples become more ferroelectric-like as opposed to relaxor type in the unannealed state. It also shows a shift of T, the temperature at dielectric maximum, toward higher value after annealing. Both behaviors are composition dependent. X-ray diffraction patterns reveal changes of crystalline structure after annealing, which can be correlated to the accompanied changes in dielectric properties. Those experimental results may be understood using a model of paraelectric BZN nano-phase particles embedded in the PZN-PT-BT matrix. © 2002 Published by Elsevier Science B.V. |
Keyword | Annealing Dielectric Properties Pzn-pt-bt Ceramics |
DOI | 10.1016/S0921-5107(02)00445-2 |
URL | View the original |
Language | 英語English |
WOS ID | WOS:000184120300009 |
Scopus ID | 2-s2.0-0038377555 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | University of Macau |
Affiliation | 1.Xi'an Jiaotong University 2.City University of Hong Kong |
Recommended Citation GB/T 7714 | Wang X.,Chen H.. Effect of annealing on the dielectric properties of PZN-PT-BT ceramics[C], 2003, 36-40. |
APA | Wang X.., & Chen H. (2003). Effect of annealing on the dielectric properties of PZN-PT-BT ceramics. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 99(1-3), 36-40. |
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