| Status | 已發表Published |
| The temporal effects in DC-biased PbNb(Zr,Sn,Ti)O3 antiferroelectric thin films | |
| Zhai J.1; Chen H.1; Colla E.V.2 | |
| 2005-08-22 | |
| Source Publication | Ceramic Transactions
 |
| Volume | 162 |
| Pages | 9-15 |
| Abstract | The effects of the DC bias application on the polarization of the antiferroelectric PbNb(ZrSn Ti)O (PNZST) thin films were studied at room temperature. The antiferroelectric ordering was found to be temporarily destroyed in time scale of approximately one second or less by application of a DC electrical field bias along the surface direction. It was observed that after removing the DC bias, the film relaxed back to the initial antiferroelectric state with a relaxation time of approximately a few thousands of seconds. These behaviors were found to be due to the accumulation of space charges near the film/substrate interface region under DC bias. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | 1.City University of Hong Kong 2.University of Illinois at Urbana-Champaign |
| Recommended Citation GB/T 7714 | Zhai J.,Chen H.,Colla E.V.. The temporal effects in DC-biased PbNb(Zr,Sn,Ti)O3 antiferroelectric thin films[C], 2005, 9-15. |
| APA | Zhai J.., Chen H.., & Colla E.V. (2005). The temporal effects in DC-biased PbNb(Zr,Sn,Ti)O3 antiferroelectric thin films. Ceramic Transactions, 162, 9-15. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment