Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition

doi:10.1080/10584580500413251

Status	已發表Published
	Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition
	Zhai J.1; Yao X.1; Xu Z.2; Chen H.2
	2005-12-01
Source Publication	Integrated Ferroelectrics
Volume	75
Pages	47-54
Abstract	Ferroelectric Pb(Zr,Ti)O thin films were deposited by metalorganic chemical vapor deposition (MOCVD) on LaNiO-buffered Pt/Ti/SiO/Si substrates. The highly (100)-oriented LaNiO buffer layer facilitated the formation of high quality PZT films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO/Si substrates. Thickness dependence of the ferroelectric properties has been observed with thickness ranging from 25 nm to 200 nm. Ferroelectric properties of PZT with different thickness, in its initial state and after voltage cycling that causes polarization fatigue, is studied by C-F and I-V measurements. The experiments revealed thickness dependence of the ferroelectric properties of both fatigued and unfatigued PZT films.
Keyword	Fatigue Ferroelectric properties PZT thin film Thinckness
DOI	10.1080/10584580500413251
URL	View the original
Language	英語English
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Conference paper
Collection	University of Macau
Affiliation	1.Tongji University 2.City University of Hong Kong
Recommended Citation GB/T 7714	Zhai J.,Yao X.,Xu Z.,et al. Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition[C], 2005, 47-54.
APA	Zhai J.., Yao X.., Xu Z.., & Chen H. (2005). Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition. Integrated Ferroelectrics, 75, 47-54.

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