The compositionally graded Ba(Zr Ti )O films with a compositional gradient from BaTiO to BaZrTiO were fabricated on LNO-buffered Pt/Ti/SiO/Si substrates by a sol-gel deposition method. In order to confirm the compositional gradient, a combination of X-ray Photoelectron Spectroscopy (XPS) and Ar ion etching was employed to produce the composition depth profile. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range from -50 to 100 °C, within which the dielectric constant showed negligible temperature dependence. The compositionally graded Ba(Zr Ti )O thin films with weak temperature dependence of tunability could be attractive materials for situations in which precise control of temperature would be either impossible or too expensive. © 2007 Springer Science+Business Media, LLC.